Low-temperature GaAs for generation and detection of terahertz radiation
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2022-07-30 22:13
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BILYK, V., BURYAKOV, A., PUSHKAREV, S.. Low-temperature GaAs for generation and detection of terahertz radiation. In: Materials Science and Condensed Matter Physics, Ed. 8-th Edition, 12-16 septembrie 2016, Chişinău. Chişinău: Institutul de Fizică Aplicată, 2016, Editia 8, p. 250. ISBN 978-9975-9787-1-2.
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Materials Science and Condensed Matter Physics
Editia 8, 2016
Conferința "International Conference on Materials Science and Condensed Matter Physics"
8-th Edition, Chişinău, Moldova, 12-16 septembrie 2016

Low-temperature GaAs for generation and detection of terahertz radiation


Pag. 250-250

Bilyk V.1, Buryakov A.1, Pushkarev S.2
 
1 Moscow Technological University (MIREA),
2 Russian Academy of Sciences
 
Disponibil în IBN: 2 august 2019


Rezumat

Photoconductive semiconductor structures based on low-temperature LT-GaAs with planar dipole antennas are the most common devices for the generation and detection of terahertz radiation [1]. Multilayer structures LT-GaAs (low-temperature grown GaAs, the low-temperature "of gallium arsenide) are studied, for the modern high-speed communication applications, for example, in ultrafast optical network switches [2]. The creation of such switches will dramatically increase the speed of data transfer. In addition, this material is used for the rapid and sensitive photodetectors. [3]   The study was made using the optical "pump-probe" technique. As the irradiation source the Ti:Sapphire laser with the wavelength of 800nm (photon energy of 1.55 eV), and a pulse duration of 100 fs was used. The principle of operation is based on the interaction of terahertz and optical radiation in a nonlinear medium. Due to the non-linearity the optical signal (high frequency) was modulated by terahertz irradiation (low frequency).   The results of THz spectra generated by antennas based on LT-GaAs with different type of substrate are shown in Table 1. It is seen that the efficiency of the antenna on a GaAs substrate with the 111 crystallographic orientation is higher. Most likely, this is due to the high concentration of free electrons in the 111 structure. The electric field accelerate the free charges on the surface and emit in a broad band corresponding to the terahertz frequency range. Spectral width depending on the slice has not changed. The narrow spectrum of THz radiation is most likely associated with limiting the possibility of detecting non-linear ZnTe crystal.   Antenna Type (Crystallographic oriantation) The efficiency of THz radiation (au. un.). Bandwidth (THz) 100 5,98 2,79 111 12,23 2,79   Thus, it is shown that the efficiency of the TH antenna based on LT-GaAs formed on the substrate  with the 111 crystallographic orientation is 2 times more effective than a similar structure made on the substrate with the 100 crystallographic orientation.  The work is supported by the Ministry of Education and Science of the Russian Federation (Grant No. 14.Z50.31.0034).