Zinc oxide thin films were deposited on glass and Si substrates by sol-gel method. Two methodics of films deposion were used: 1. The hydrolysis of TEOS in the presence of the inorganic salt Zn(NO3)2 with next annealing of films at T=400C. 2. Using of highmolecular compound (polyvinilpirrolidon K-17) and Zn(NO3)2 with next annealing of films at T=400C.  Micro-Raman and photoluminescence spectra (PL) were measured at room temperature in backscattering geometry using triple Raman spectrometer Horiba Jobin-YvonT-64000, equipped with cooled CCD detector.  As an excitation the 488 nm line from Ar-Kr ion laser and 325 nm line from He-Cd laser were used. An Olympus BX41 microscope equipped with a ×50 objective  and a ×40 long focus objective was used to focus the excited radiation on the sample and collect the scattered light into the spectrometer. The laser power on the sample surface was less than 1 mW.  The ZnO with a hexagonal wurtzite structure belongs to the space group C6ν. Optical phonons in the center of the Brillouin zone correspond to irreducible representations of the symmetry: opt = A1 + E1 + 2E2 + 2B1. The A1 and E1 modes are polar and split in to transverse-optical (TO) and longitudinal-optical (LO) phonon vibrational modes and they are both Raman and infrared active. The B1 modes are silent and Raman and IR inactive. Two nonpolar E2 modes are only Raman-active and split into E2lowand E2high, associated with the oscillations of zinc (Zn) and oxygen (O) atoms in the plane normal to c-axis, respectively.In backscattering geometry, aсcording to selection rules, only the E2 and A1LO vibrations modes can be observed in Raman spectra. Fig. 1 shows the microRaman spectra of ZnO films, obtained in backscattering geometry at room temperature. In Raman spectra for ZnO films dominate E2low at 99.2 cm-1 and E2high at 436.78 cm-1 phonon modes of wurtzite structure ZnO. Besides, there is a quasi-A1LO mode at 580 cm-1 positioned between the values of the A1LOand the E1LO modes for the bulk ZnO. Weak peaks at 332  cm-1correspond to E2high - E2low two-phonon modes of ZnO.  The photoluminescence measurements of the ZnO film have been performed. Strong ultraviolet (UV) emission centered at ~3.26 eV (380 nm) is attributed to the recombination of free excitons (band edge). Broad visible PL band is observed in region 2.0 – 2.8 eV is the superposition of several PL bands caused by different defective radiative transitions, in particular point defects (VZn), surface defects, for example, oxygen vacancy (VO), Zn interstitials (Zni). The surface morphology of ZnO films has been investigated by AFM–method.