Conductivity mechanisms of Cu2ZnSn(SxSe1-x)4 thin-films prepared by spray pyrolysis
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DERMENJI, Lazari; CURMEI, Nicolai; BRUC, Leonid; GUC, Maxim; LISUNOV, Konstantin. Conductivity mechanisms of Cu2ZnSn(SxSe1-x)4 thin-films prepared by spray pyrolysis. In: Materials Science and Condensed Matter Physics. Editia a 8-a, 12-16 septembrie 2016, Chişinău. Chişinău: Institutul de Fizică Aplicată, 2016, p. 166. ISBN 978-9975-9787-1-2.
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Materials Science and Condensed Matter Physics
Editia a 8-a, 2016
Conferința "International Conference on Materials Science and Condensed Matter Physics"
8-th Edition, Chişinău, Moldova, 12-16 septembrie 2016

Conductivity mechanisms of Cu2ZnSn(SxSe1-x)4 thin-films prepared by spray pyrolysis


Pag. 166-166

Dermenji Lazari1, Curmei Nicolai1, Bruc Leonid1, Guc Maxim12, Lisunov Konstantin1
 
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 Catalonia Institute for Energy Research (IREC), Barcelona
 
Disponibil în IBN: 30 iulie 2019


Rezumat

A solar energy conversion efficiency of 12.6 % has been reached by using the Cu2ZnSn(SxSe1-x)4, or CZTSSe, solid solutions as absorber layers in thin film solar cells [1]. The CZTSSe thin films can be obtained with different methods. The spray deposition method is particularly attractive since it is a relatively fast and vacuum-free technique [2].   Thin Cu2ZnSn(SxSe1-x)4 films with x = 1.0 and 0.85 were prepared by the spray pyrolysis method with subsequent annealing in the presence of elemental sulfur or selenium. The surface sensitive Raman measurements indicated a high crystalline quality of all samples and absence of secondary phases. The resistivity,  (T), is governed by the Mott variable-range hopping conduction at high temperatures, when the mean hopping length Rh (T) exceeds the mean distance between the acceptors, RA, but is still smaller than the typical inter-grain distance, aig (right panel of Fig. 1). However, with lowering the temperature the resistivity, connected to the inter-grain tunneling, becomes predominant provided that Rh (T) > aig (left panel of Fig. 1). Analysis of the  (T) data yielded width of the acceptor band, W  90  150 meV, the values of the acceptor concentration and of the localization radius, with the evidence for all samples to be relatively far from the metalinsulator transition. The radius of the mean grain size ~ 40  90 nm and the values of aig ~ 7 nm were estimated.