Magnetron sputtering multistrate thin layers deposition from doped boron-phosphate systems
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BOROICA, Lucica; SAVA, Bogdan Alexandru; SHIKIMAKA, Olga A.; GRABCO, Daria; ELIŞA, Mihail; IORDANESCU, Raluca; MONTEIRO, Regina C C.; MEDIANU, R.V.. Magnetron sputtering multistrate thin layers deposition from doped boron-phosphate systems. In: Materials Science and Condensed Matter Physics. Editia a 8-a, 12-16 septembrie 2016, Chişinău. Chişinău: Institutul de Fizică Aplicată, 2016, p. 127. ISBN 978-9975-9787-1-2.
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Materials Science and Condensed Matter Physics
Editia a 8-a, 2016
Conferința "International Conference on Materials Science and Condensed Matter Physics"
8-th Edition, Chişinău, Moldova, 12-16 septembrie 2016

Magnetron sputtering multistrate thin layers deposition from doped boron-phosphate systems


Pag. 127-127

Boroica Lucica1, Sava Bogdan Alexandru1, Shikimaka Olga A.2, Grabco Daria2, Elişa Mihail3, Iordanescu Raluca3, Monteiro Regina C C.4, Medianu R.V.1
 
1 National Institute for Laser, Plasma and Radiation Physics (INFLPR),
2 Institute of Applied Physics, Academy of Sciences of Moldova,
3 National Institute for Optoelectronics INOE2000, Magurele,
4 University of Lisbon
 
Disponibil în IBN: 29 iulie 2019


Rezumat

The experiments for the deposition of very thin films were realized on a RF magnetron sputtering device, ions tune assisted, VARIAN ER 3119 type. The boron-phosphate and boro-silica glass substrates were positioned in the reaction chamber at 100 mm from magnetron cathode. An Ag 99.99% target was positioned near the other magnetron. The Ag layer was made in controlled atmosphere Ar 99.99%, at a flow rate of 25 s.c.cm and partial pressure 4,5 x 10-4 torr. The evaporation rate was constant 0.5 Ǻ/s – 0.9 Ǻ/s. The layer thickness on monitor was 3 nm + 0.5 nm. By fine control of Ag surface morphology deposed (with ion energies <1500 eV) increased the resolution of details to 30 nm. Using Quantum Efficiency Measurement System QE 1400 the transmission in visible domain was measured. In the 400 nm – 500 nm domains at 480 nm the negative refraction index appears. We point out that for a layer of 3 nm + 0.5 nm thickness a transmission reduction by 35-40% cannot appear in the visible domain. Ellipsometry measurements are presented in fig. 1. The AFM investigation made on a PARK XE100 apparatus confirm that the thickness of the layer is in concordance with the in situ monitoring deposition device data. The tendency to self-organization can be observed on small areas of 20µm x 20µm (fig. 2). Acknowledgements: To the UEFISCDI  Romania, for the financial support in the frame of 7081/2013 M-ERA.NET project, 186/2012 project PNII and Bilateral Romanian-Moldovian project 695/2013 and 13.820.05.20/RoF/2013 and to FCT (Foundation for Science and Technology), Portugal, for financing M-ERA.NET/0010/2012 and UID/CTM/500025/2013.proje