In this paper the results obtained at investigation of the frequency dependencies of the electrical properties of --GaSe layered monocrystals and influence on them of constant bias voltage are presented. The frequency dependencies of real ReZ and imaginary ImZ parts of the complex impedance measurements were performed in a frequency range 103-107 Hz with test signal of 30 mV and different values of the dc bias voltages Udc=0,15 V using an the Keithley 4200-SCS. From the experimental data the frequency dependencies of the real ReY and imaginary ImY parts of complex admittance, dielectric loss tangent tg and phase shift angle  were calculated. Typical frequency dependencies of the ReY and  obtained for the sandwich structure In/-GaSe/In (dGaSe=0.62 mm, SIn=1.76·10-2 cm2, E C6) are presented on Fig.1 and Fig.2 respectively. Fig.1. Frequency dependencies of ReY at different values of the dc bias voltages. Fig.2. Frequency dependencies of  at different values of the dc bias voltages. At the voltages Udc<6 V the frequency dependence ReY spectra exhibits four different regions (Fig.1): A–low-frequency region, where a plateau with weak dispersion of ReY are observed, В–a region with a sufficiently strong dependence ReYf 0.81 (at U=0 V), which is typical for a hopping mechanism of charge transport through localized states. With increasing of applied voltage the power law exponent s decreases rapidly and already at U=2.0 V, the frequency dependence becomes ReYf 0.35 and extends into the region C, which is characterized by low frequency and field dependences (s=0.240.35). Region D at frequencies f≥106 Hz is characterized by weak superlinear dependence of the ReY with the exponent s=1.03÷1.05 and the parameters ReY, ImY, ReZ, ImZ, tg и  become independent of the applied bias. At the voltage U>6 V in the low frequency region appear decreasing frequency dependencies of the ReY (region D on Fig.1) that are typical for the band conduction mechanism with multiple carrier recapture on relatively shallow traps. Between the regions E and C forms a plateau A1, where ReY is weakly dependent on the frequency. The phase shift angle  are displaced into the region of positive values and at high bias voltages frequency dependencies of  have a pronounced maxima (Fig.2) which are characteristic to an inductive behavior of the admittance. Based on obtained experimental data the equivalent circuit models for all of the cases are proposed and the parameters of their constituent elements are calculated.