Significant interest in studying the properties of narrow-gap semiconductors, particularly lead telluride tin telluride single crystals, is attributed to wide possibilities of the practical use of these materials as detectors and radiation sources in the infrared spectrum, thermocouples, strain gauges, etc. At the same time, scientific interest in these materials is primarily associated with their unusual galvanomagnetic, thermomagnetic, and magneto-optical properties. In general, calculation of kinetic coefficients for semimetals and narrow-gap semiconductors is an extremely difficult problem because it is impossible to strictly take into account all the factors related to charge transfer in crystals owing to the strong nonparabolicity of the bands and the complex mechanism of carrier scattering. However, an experimental study of transport phenomena in these semiconductors provides the most complete information on the kinetics and energy spectrum of charge carriers over a wide range of variation in the charge carrier concentration, impurities, and temperature. A comprehensive study of the temperature dependence of thermoelectric power, electric conductivity, and Hall effect and the dependence of thermoelectric power on magnetic field induction conducted using the same samples has made it possible to calculate a number of kinetic parameters of five Pb1–xSnxTe (x = 0.18) samples with different charge carrier concentrations. In our previous studies [1–3], using Pb0.82Sn0.18Te samples with the same carrier concentrations, the Shubnikov-de Haas oscillations and the temperature dependences of thermopower have been examined. Experimental temperature dependences of the Hall effect (figure) and electric conductivity of Pb1-xSnxTe with different carrier concentrations have been determined; theoretical temperature dependences of the Hall effect have been calculated. Temperature dependences of the Hall coefficient of Pb0.82Sn0.18Te can be attributed to the presence of light and heavy hole bands [4–6].