This study presents the results of studying the frequency dependence of real and imaginary components of the complex dielectric permittivity, loss tangent ,  ac-conductivity across the layers of TlSbS2 single crystals at frequencies from 50 kHz up to 35 MHz. Samples from TlSbS2 were made in sandwich form with electrodes of silver paste. The thickness of the single-crystal samples of TlSbS2 was ~100 microns. All measurements were performed at 300 K by the resonance method.     The results demonstrate that the dielectric dispersion in the studied crystals has a relaxation nature. However, if the value of ε ׳ descended from 9.72  to 6.33  in the mentioned frequency range with an increase in frequency, then the value of ε  ״ was subjected to stronger frequency dispersion decreasing by a factor of 10.   It is seen from measurements that tanδ descends hyperbolically with an increase in frequency, which indicates conductivity losses.     We measured also the frequency dependence of the ac- conductivity of TlSbS2 single crystal at T = 300 K. The value of ac is increased from 4- 10-8 to 3.2 -10-6 Ohm-1cm-1 in the mentioned frequency range with an increase in frequency. It must be noted that dc-conductivity of TlSbS2 single crystal was equal to 4 -10-10 Ohm-1cm-1 at T = 300 K. Frequency dependence of conductivity is described by the power law -ac ~ f n, where n = 0.6 at f  =  5 -104 – 6 -106 Hz, and n = 0.8 at f  =  6 - 106 – 3.5- 107 Hz.  It is known that the band-type ac- conductivity is mainly frequency independent up to 1010 –1011 Hz. The experimental dependence -ac ~ f 0.8 that we observed indicates that it is conditioned by hops of charge carriers between the states localized in the forbidden band of TlSbS2. These can be states localized near the edges of allowed bands or localized near the Fermi level. However, since the conductivity over the states near the Fermi level always surpasses the conductivity over the states near the edges of allowed bands under experimental conditions, law -ac ~ f 0.8 that we found indicates the hopping mechanism of the charge transfer localized in the vicinity of the Fermi level.     We calculated the density of states at the Fermi level from the measured values of the conductivity σac(f). Calculated value of NF for TlSbS2 single crystals was equal to 9.6-1018 eV-1∙cm-3. Evaluated value for the average time τ of charge carrier hopping from one localized state to another was equal to 1.7 -10-7 s.  Calculated value for the average hopping distance R for studied single crystals was equal to 84 Å. We estimated scattering of trap states near the Fermi level: ΔE = 84 meV for  TlSbS2 crystals and determined the concentration of deep traps in these crystals: Nt =  8.1 -1017cm-3.