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 SM ISO690:2012KAPON, Eli, MEREUTZA, Alexandru, DOROGAN, Andrei, DRĂGUŢAN, Nicolae, VIERU, Tatiana, SYRBU, Nicolae. Exciton luminescence in In0.3Ga0.7As/GaAs quantum well heterostructures. In: Nanotechnologies and Biomedical Engineering, Ed. 1, 7-8 iulie 2011, Chișinău. Technical University of Moldova, 2011, Editia 1, pp. 83-85. ISBN 978-9975-66-239-0.. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Nanotechnologies and Biomedical Engineering Editia 1, 2011 |
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Conferința "International Conference on Nanotechnologies and Biomedical Engineering" 1, Chișinău, Moldova, 7-8 iulie 2011 | ||||||
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| Pag. 83-85 | ||||||
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Radiation maxima were observed in photoluminescence spectra of GaAs/ In0.3 Ga0.7As/ GaAs in case of 632.8nm and 532nm He-Ne laser excitation conditioned by the recombination from ground (e1-hh1, e1-lh1) and excited (e2-hh2, e2-lh2) states of polarionic excitons in quantum wells. The doublet character of e1-hh1, e1-lh1 transitions can be explained by the interaction of excitons in quantum wells. Radiation maxima are revealed in the region of 1.5eV energy conditioned by recombination transitions Eb-hh1, Eb-lh1of the GaAs buffer layer. |
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| Cuvinte-cheie quantum wells, Heterostructure, exciton, Luminescence |
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