| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 640 0 |
 SM ISO690:2012YOVU, M., IASENIUC, Oxana. Stationary and transient photocurrents in some amorphous Ge-As-Se thin films. In: Optoelectronics and Advanced Materials, Rapid Communications, 2018, nr. 9-10(12), pp. 563-567. ISSN 1842-6573. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
  Optoelectronics and Advanced Materials, Rapid Communications |
||||||
| Numărul 9-10(12) / 2018 / ISSN 1842-6573 /ISSNe 2065-3824 | ||||||
|
||||||
| Pag. 563-567 | ||||||
|
||||||
| Rezumat | ||||||
The stationary and transient characteristics of photoconductivity in thermally deposited amorphous Ge0.07As0.07Se0.86 thin films, with the theoretically calculated mean coordination number Z=2.21, are reported. Introduction of the metallic elements (Sn and Ge) in selenide and sulphide (As2S3, As2Se3, As-S-Se) glasses, lead to the appearance of the tetrahedral structural units in the base glasses, which change the mean coordination number Z. These changes lead to non-monotonous changes of the electrical, optical and photoelectrical characteristics, depending on the glass comp osition. It was found that the dependence of the photocurrent on light intensity has a power-law behavior Iph~Fβ (1.0≤β≤0.5), which is characteristic for the amorphous semiconductors with the exponential distribution of the localized states in the band gap Eg. |
||||||
| Cuvinte-cheie amorphous thin films, chalcogenide glasses, Coordination number, photoconductivity |
||||||
|
DataCite XML Export
<?xml version='1.0' encoding='utf-8'?> <resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'> <creators> <creator> <creatorName>Iovu, M.S.</creatorName> <affiliation>Institutul de Fizică Aplicată, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Iaseniuc, O.V.</creatorName> <affiliation>Institutul de Fizică Aplicată, Moldova, Republica</affiliation> </creator> </creators> <titles> <title xml:lang='en'>Stationary and transient photocurrents in some amorphous Ge-As-Se thin films</title> </titles> <publisher>Instrumentul Bibliometric National</publisher> <publicationYear>2018</publicationYear> <relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1842-6573</relatedIdentifier> <subjects> <subject>amorphous thin films</subject> <subject>chalcogenide glasses</subject> <subject>Coordination number</subject> <subject>photoconductivity</subject> </subjects> <dates> <date dateType='Issued'>2018-10-08</date> </dates> <resourceType resourceTypeGeneral='Text'>Journal article</resourceType> <descriptions> <description xml:lang='en' descriptionType='Abstract'><p>The stationary and transient characteristics of photoconductivity in thermally deposited amorphous Ge<sub>0.07</sub>As<sub>0.07</sub>Se<sub>0.86</sub> thin films, with the theoretically calculated mean coordination number Z=2.21, are reported. Introduction of the metallic elements (Sn and Ge) in selenide and sulphide (As<sub>2</sub>S<sub>3</sub>, As<sub>2</sub>Se<sub>3</sub>, As-S-Se) glasses, lead to the appearance of the tetrahedral structural units in the base glasses, which change the mean coordination number Z. These changes lead to non-monotonous changes of the electrical, optical and photoelectrical characteristics, depending on the glass comp osition. It was found that the dependence of the photocurrent on light intensity has a power-law behavior I<sub>ph</sub>~F<sup>β</sup> (1.0≤β≤0.5), which is characteristic for the amorphous semiconductors with the exponential distribution of the localized states in the band gap E<sub>g</sub>.</p></description> </descriptions> <formats> <format>uri</format> </formats> </resource>
|
|
|
