Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
612 0 |
SM ISO690:2012 YOVU, M., IASENIUC, Oxana. Stationary and transient photocurrents in some amorphous Ge-As-Se thin films. In: Optoelectronics and Advanced Materials, Rapid Communications, 2018, nr. 9-10(12), pp. 563-567. ISSN 1842-6573. |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Optoelectronics and Advanced Materials, Rapid Communications | |||||
Numărul 9-10(12) / 2018 / ISSN 1842-6573 /ISSNe 2065-3824 | |||||
|
|||||
Pag. 563-567 | |||||
|
|||||
Rezumat | |||||
The stationary and transient characteristics of photoconductivity in thermally deposited amorphous Ge0.07As0.07Se0.86 thin films, with the theoretically calculated mean coordination number Z=2.21, are reported. Introduction of the metallic elements (Sn and Ge) in selenide and sulphide (As2S3, As2Se3, As-S-Se) glasses, lead to the appearance of the tetrahedral structural units in the base glasses, which change the mean coordination number Z. These changes lead to non-monotonous changes of the electrical, optical and photoelectrical characteristics, depending on the glass comp osition. It was found that the dependence of the photocurrent on light intensity has a power-law behavior Iph~Fβ (1.0≤β≤0.5), which is characteristic for the amorphous semiconductors with the exponential distribution of the localized states in the band gap Eg. |
|||||
Cuvinte-cheie amorphous thin films, chalcogenide glasses, Coordination number, photoconductivity |
|||||
|
Crossref XML Export
<?xml version='1.0' encoding='utf-8'?> <doi_batch version='4.3.7' xmlns='http://www.crossref.org/schema/4.3.7' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.crossref.org/schema/4.3.7 http://www.crossref.org/schema/deposit/crossref4.3.7.xsd'> <head> <doi_batch_id>ibn-79740</doi_batch_id> <timestamp>1711723998</timestamp> <depositor> <depositor_name>Information Society Development Instiute, Republic of Moldova</depositor_name> <email_address>idsi@asm.md</email_address> </depositor> </head> <body> <journal> <journal_metadata> <full_title>Optoelectronics and Advanced Materials, Rapid Communications</full_title> <issn media_type='print'>18426573</issn> </journal_metadata> <journal_issue> <publication_date media_type='print'> <year>2018</year> </publication_date> <issue>9-10(12)</issue> </journal_issue> <journal_article publication_type='full_text'><titles> <title>Stationary and transient photocurrents in some amorphous Ge-As-Se thin films</title> </titles> <contributors> <person_name sequence='first' contributor_role='author'> <given_name>Mihail</given_name> <surname>Iovu</surname> </person_name> <person_name sequence='additional' contributor_role='author'> <given_name>Oxana</given_name> <surname>Iaseniuc</surname> </person_name> </contributors> <publication_date media_type='print'> <year>2018</year> </publication_date> <pages> <first_page>563</first_page> <last_page>567</last_page> </pages> </journal_article> </journal> </body> </doi_batch>