The optical registration of holographic gratings based on photostructural transformations in the structure of thin-film Ni-As2S3 and based on photoinduced interaction in the structure of Cu-As2Se3, both in the field and without of corona discharge have been studied. It is shown that the use of corona discharge during holographic recording in the structure of Ni-As2S3, and in the structure of Cu-As2Se3 leads to the increasing of holographic sensitivity of these structures and the diffraction efficiency of the recorded holographic diffraction gratings. The chemical etching of holographic diffraction gratings formed in these thin-film structures in the presence of corona discharge result in increasing in the depth and order the relief etched relief-phase diffraction gratings, as well as in increasing of their diffraction efficiency compared with samples obtained without the corona discharge.