Influence of electric field effect on quantum oscillations in single crystal Bi nanowires
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KONOPKO, Leonid, NIKOLAEVA, Albina, HUBER, Tito. Influence of electric field effect on quantum oscillations in single crystal Bi nanowires. In: Nanotechnologies and Biomedical Engineering, Ed. 2, 18-20 aprilie 2013, Chișinău. Technical University of Moldova, 2013, Editia 2, pp. 203-206. ISBN 978-9975-62-343-8..
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Nanotechnologies and Biomedical Engineering
Editia 2, 2013
Conferința "International Conference on Nanotechnologies and Biomedical Engineering"
2, Chișinău, Moldova, 18-20 aprilie 2013

Influence of electric field effect on quantum oscillations in single crystal Bi nanowires


Pag. 203-206

Konopko Leonid12, Nikolaeva Albina12, Huber Tito3
 
1 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu",
2 International Laboratory of High Magnetic Fields and Low Temperatures,
3 Howard University
 
Proiecte:
 
Disponibil în IBN: 18 iunie 2019


Rezumat

We report the results of studies of the magnetoresistance (MR) and electric field effect (EFE) of single-crystal Bi nanowires with diameter 40 nm<d<800 nm at low temperatures. Single-crystal nanowire samples were prepared by the Taylor-Ulitovsky technique; they were cylindrical single crystals with the orientation along the wire axis where the C3 axis was inclined at an angle of 70o to the wire axis. According to theory of S. Murakami, bismuth bilayers can exhibit the quantum spin Hall effect. A Bi crystal can be viewed as a stacking of bilayers with a honeycomblike lattice structure along the [111] direction. Using electric field effect in measurements of quantum magnetic oscillations we have confirmed the dependence of the surface states on the diameter of the Bi nanowires.

Cuvinte-cheie
Bismuth, nanowires, Magnetoresistance, Aharonov-Bohm oscillations, field effect.