Generalized bipolariton model. Propagation of a ultrashort laser pulse through a thin semiconductor film in the conditions of two-photon generation of biexcitons
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BELOUSSOV, Igor. Generalized bipolariton model. Propagation of a ultrashort laser pulse through a thin semiconductor film in the conditions of two-photon generation of biexcitons. In: Nanotechnologies and Biomedical Engineering, Ed. 2, 18-20 aprilie 2013, Chișinău. Technical University of Moldova, 2013, Editia 2, pp. 138-142. ISBN 978-9975-62-343-8..
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Nanotechnologies and Biomedical Engineering
Editia 2, 2013
Conferința "International Conference on Nanotechnologies and Biomedical Engineering"
2, Chișinău, Moldova, 18-20 aprilie 2013

Generalized bipolariton model. Propagation of a ultrashort laser pulse through a thin semiconductor film in the conditions of two-photon generation of biexcitons


Pag. 138-142

Beloussov Igor
 
Institute of Applied Physics, Academy of Sciences of Moldova
 
 
Disponibil în IBN: 17 iunie 2019


Rezumat

generalized bipolariton model is proposed. Bipolaritons is formed from virtual excitons of four kinds. There exists both attractive and repulsive interaction between these excitons, though only excitons of a specific type can interact with light. A substantial difference between conventional [1] and our models is shown for the case of nonlinear transmission/reflection of ultrashort laser pulses by a thin semiconductor film under two-photon generation of biexcitons.

Cuvinte-cheie
biexciton, bipolariton, thin semiconductor film, ultrashort laser pulse