| Articolul precedent |
| Articolul urmator |
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 SM ISO690:2012MONAICO, Eduard, TIGINYANU, Ion, NIELSCH, Kornelius, URSACHI, Veaceslav, KOLIBABA, Gleb, NEDEOGLO, Dumitru, COJOCARU, Ala, FOLL, Helmut. Comparative study of porosification in InAs, InP, ZnSe and ZnCdS. In: Nanotechnologies and Biomedical Engineering, Ed. 2, 18-20 aprilie 2013, Chișinău. Technical University of Moldova, 2013, Editia 2, pp. 51-55. ISBN 978-9975-62-343-8.. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Nanotechnologies and Biomedical Engineering Editia 2, 2013 |
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Conferința "International Conference on Nanotechnologies and Biomedical Engineering" 2, Chișinău, Moldova, 18-20 aprilie 2013 | |
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| Pag. 51-55 | |
| Rezumat | |
We report on a comparative study of the pore growth during anodization of a narrow-bandgap III-V compound (InAs), a medium-bandgap III-V one (InP) and wide-bandgap II-VI semiconductors (ZnSe and Zn0,4Cd0,6S). According to the obtained results, the morphology of the porous layers can be controlled by the composition of the electrolyte and the applied electrochemical parameters. It was evidenced that in the narrow bandgap semiconductor InAs it is difficult to control the mechanism of pore growth. Both currentline oriented pores and crystallographically oriented pores were produced in the medium-bandgap material InP. The electrochemical nanostructuring of wide-bandgap semiconductors realized in single crystalline highconductivity samples evidenced only current-line oriented pores. This behavior is explained in terms of difference in the values of electronegativity of the constituent atoms and the degree of ionicity. |
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| Cuvinte-cheie Anodization, crystallographically oriented pores, current-line-oriented pores, ionicity degree, porous layer. |
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