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SM ISO690:2012 GERNGROSS, Mark Daniel, HRKAC, Viktor, KIENLE, Lorenz, CARSTENSEN, Juergen, FOLL, Helmut. Formation and characterization of ni nanostructures in porous InP – from crystallites to wires. In: Nanotechnologies and Biomedical Engineering, Ed. 2, 18-20 aprilie 2013, Chișinău. Technical University of Moldova, 2013, Editia 2, pp. 43-46. ISBN 978-9975-62-343-8.. |
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Nanotechnologies and Biomedical Engineering Editia 2, 2013 |
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Conferința "International Conference on Nanotechnologies and Biomedical Engineering" 2, Chișinău, Moldova, 18-20 aprilie 2013 | ||||||
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Pag. 43-46 | ||||||
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In this work the galvanic formation of Ni crystallites and Ni nanowires with very high aspect ratios (>1000:1) in porous InP is presented. By depositing a dielectric interlayer on the InP pore walls it is possible to produce very high aspect ratio Ni nanowires. The coercivity of these nanowires is about 100 Oe (in-plane) and 240 Oe (out-of-plane), while the coercivity of the crystallites lies in between these values. The in-plane remanence squareness of the Ni nanowires is very low (S ≈ 0.08), out-of-plane it is 0.36. For the Ni crystallites the remanence squareness lies in between the range given for the Ni nanowires. |
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Cuvinte-cheie indium phosphide, Porous, galvanic deposition, nickel |
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