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 SM ISO690:2012TSIULYANU , Dumitru, CIOBANU, Marina. Impact of Adsorbed Gases on the Transport Mechanisms in Ge 8 As 2 Te 13 S 3 Amorphous Films. In: Glass Physics and Chemistry, 2019, nr. 1(45), pp. 53-59. ISSN 1087-6596. DOI: https://doi.org/10.1134/S1087659619010140 |
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  Glass Physics and Chemistry |
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| Numărul 1(45) / 2019 / ISSN 1087-6596 | ||||||
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| DOI:https://doi.org/10.1134/S1087659619010140 | ||||||
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Abstract: It is shown that the gas adsorption in chalcogenide glasses results in modifications of transport mechanisms by the surface, along with formation of surface localized states. A detailed quantitative analysis is made on experimental data taking on glassy thin films of Ge 8 As 2 Te 13 S 3 , physically grown in vacuum. The measurements of alternating current (AC) conductivity of these films have been carried out in the frequency range from 5 Hz to 13 MHz, in both dry air and its mixture with a controlled concentration of nitrogen dioxide, at different temperatures. It was found that the changes of environmental conditions by applying of even very small (ppm) amounts of toxic gases, e.g. NO 2 , dramatically influences the AC conductivity spectra. This is due to a sharp increasing of holes concentration in the valence band of an ultrathin layer adjacent to surface, which results in modification of the dominant mechanism of current flow. In a definite frequency range the charge transport by hopping via valence band edge localized states becomes negligible and the mechanism of conductivity via extended states becomes the main until frequencies ω > 10 5 Hz, at which the mechanism of hopping via localized states in the vicinity of Fermi level becomes predominant. |
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| Cuvinte-cheie amorphous chalcogenides, charge transport, Gas adsorption, NO2 |
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Dublin Core Export
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Ţiuleanu, D.I.</dc:creator> <dc:creator>Ciobanu, M.N.</dc:creator> <dc:date>2019-01-01</dc:date> <dc:description xml:lang='en'><p>Abstract: It is shown that the gas adsorption in chalcogenide glasses results in modifications of transport mechanisms by the surface, along with formation of surface localized states. A detailed quantitative analysis is made on experimental data taking on glassy thin films of Ge <sub>8</sub> As <sub>2</sub> Te <sub>13</sub> S <sub>3</sub> , physically grown in vacuum. The measurements of alternating current (AC) conductivity of these films have been carried out in the frequency range from 5 Hz to 13 MHz, in both dry air and its mixture with a controlled concentration of nitrogen dioxide, at different temperatures. It was found that the changes of environmental conditions by applying of even very small (ppm) amounts of toxic gases, e.g. NO <sub>2</sub> , dramatically influences the AC conductivity spectra. This is due to a sharp increasing of holes concentration in the valence band of an ultrathin layer adjacent to surface, which results in modification of the dominant mechanism of current flow. In a definite frequency range the charge transport by hopping via valence band edge localized states becomes negligible and the mechanism of conductivity via extended states becomes the main until frequencies ω > 10 <sup>5</sup> Hz, at which the mechanism of hopping via localized states in the vicinity of Fermi level becomes predominant.</p></dc:description> <dc:identifier>10.1134/S1087659619010140</dc:identifier> <dc:source>Glass Physics and Chemistry 45 (1) 53-59</dc:source> <dc:subject>amorphous chalcogenides</dc:subject> <dc:subject>charge transport</dc:subject> <dc:subject>Gas adsorption</dc:subject> <dc:subject>NO2</dc:subject> <dc:title>Impact of Adsorbed Gases on the Transport Mechanisms in Ge 8 As 2 Te 13 S 3 Amorphous Films</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>
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