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<resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'>
<identifier identifierType='DOI'>10.1134/S1087659619010140</identifier>
<creators>
<creator>
<creatorName>Ţiuleanu, D.I.</creatorName>
<affiliation>Universitatea Tehnică a Moldovei, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Ciobanu, M.N.</creatorName>
<affiliation>Universitatea Tehnică a Moldovei, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'>Impact of Adsorbed Gases on the Transport Mechanisms in Ge 8 As 2 Te 13 S 3 Amorphous Films</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2019</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1087-6596</relatedIdentifier>
<subjects>
<subject>amorphous chalcogenides</subject>
<subject>charge transport</subject>
<subject>Gas adsorption</subject>
<subject>NO2</subject>
</subjects>
<dates>
<date dateType='Issued'>2019-01-01</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'><p>Abstract: It is shown that the gas adsorption in chalcogenide glasses results in modifications of transport mechanisms by the surface, along with formation of surface localized states. A detailed quantitative analysis is made on experimental data taking on glassy thin films of Ge <sub>8</sub> As <sub>2</sub> Te <sub>13</sub> S <sub>3</sub> , physically grown in vacuum. The measurements of alternating current (AC) conductivity of these films have been carried out in the frequency range from 5 Hz to 13 MHz, in both dry air and its mixture with a controlled concentration of nitrogen dioxide, at different temperatures. It was found that the changes of environmental conditions by applying of even very small (ppm) amounts of toxic gases, e.g. NO <sub>2</sub> , dramatically influences the AC conductivity spectra. This is due to a sharp increasing of holes concentration in the valence band of an ultrathin layer adjacent to surface, which results in modification of the dominant mechanism of current flow. In a definite frequency range the charge transport by hopping via valence band edge localized states becomes negligible and the mechanism of conductivity via extended states becomes the main until frequencies &omega; &gt; 10 <sup>5</sup> Hz, at which the mechanism of hopping via localized states in the vicinity of Fermi level becomes predominant.</p></description>
</descriptions>
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