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 SM ISO690:2012POSTOLACHE, Vitalie, MONAICO, Eduard, BORODIN, Eugeniu, LUPAN, Oleg, URSACHI, Veaceslav, ADELUNG, Rainer, NIELSH , Kornelius, TIGINYANU, Ion. Photoconductivity relaxation in nanostructured InP. In: Microelectronics and Computer Science: The 5th International Conference, Ed. 8, 22-25 octombrie 2014, Chisinau. Chișinău, Republica Moldova: Universitatea Tehnică a Moldovei, 2014, Ediția 8, pp. 94-97. ISBN 978-9975-45-329-5.. |
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| Microelectronics and Computer Science Ediția 8, 2014 |
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Conferința "Microelectronics and Computer Science" 8, Chisinau, Moldova, 22-25 octombrie 2014 | |
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| Pag. 94-97 | |
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We show that long-duration-photoconductivity decay (LDPCD) and persistent photoconductivity (PPC) in porous InP structures produced by anodization of InP substrates can be controlled through the control of their morphology. Particularly, the PPC inherent at low temperatures to porous InP layers with the thickness of skeleton walls comparable with pore diameters is quenched in structures consisting of ultrathin walls produced at high anodization voltages. |
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| Cuvinte-cheie Porous InP, Anodization, ultrathin walls, Photoconductivity decay, persistent photoconductivity |
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