Features of rotation diagrams transverse magnetoresistance bulk samples and semiconductor alloys wires Bi1-xSbx
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BODYUL, P., POPOV, Ivan, PARA, Gheorghe, RUSU, Alexandru, ISTRATII, Evghenii. Features of rotation diagrams transverse magnetoresistance bulk samples and semiconductor alloys wires Bi1-xSbx. In: Materials Science and Condensed Matter Physics, Ed. 7, 16-19 septembrie 2014, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2014, Editia 7, p. 249.
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Materials Science and Condensed Matter Physics
Editia 7, 2014
Conferința "Materials Science and Condensed Matter Physics"
7, Chișinău, Moldova, 16-19 septembrie 2014

Features of rotation diagrams transverse magnetoresistance bulk samples and semiconductor alloys wires Bi1-xSbx


Pag. 249-249

Bodyul P., Popov Ivan, Para Gheorghe, Rusu Alexandru, Istratii Evghenii
 
Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova
 
Proiecte:
 
Disponibil în IBN: 12 martie 2019


Rezumat

Experimental study of anisotropy of the galvanomagnetic prope1iies of bismuth ant its alloys is perfo1med by removing the rotation diagrams transverse magnetoresistance (RDTM). Study of RDTM paiiicularly important in the wires, having a test cylinder as in addition to studying the magnetoresistance anisotropy, its dependence on temperature, magnetic field, the sample sizes, the it is the only method that allows orientation of the magnetic field along certiain crystallographic directions. Accurate fixation of crystallographic directions in cylindrical shape samples (wires) allows the study of the Shubnikov de Haas oscillations, and the structure of Fenni surface, paiiicularly in the case of Bi-Sb alloys and presence of these surface states [2]. Science the frequencies of Quantum SdH oscillations ai·e directly related to the Fenni surface (FS) cross sections via the Onsager relationt = 2rr • A , where A is the area of an exti·emal cyclotron orbit, the shape and size of the FS can be obtained from the angulai· dependences of FS measusured within the three main c1ystallogaphyc planes. In this paper we investigated RDTM of bulk samples Bi-17 at%Sb, cut by electi·icspark way along the bisector axis and in the wires of similai· composition and orientation. Wires Bi-17at%Sb in the glass cover obtained by casting from liquid phase - Ulitovsky method [3]. It is shown that in a weak magnetic fields at T = 300 K, 4,2 K, if the cunent derected along the bisector axis, that in magnetic fields up to 0,4 T rotation curve has simple bell-shaped fo1m. In the analytical writing he expressed by the fo1mula: Pz:(B)- Pz:(0 = P11,2:B:sin 20 + P11,-B:cos:0). In samples of pure Bi increase of magnetic field produces a minimum at 90° and two maxima at 45° and 135°. Chai·acteristically, that P22CBa) staiiing with 0,5 T grows with magnetic field faster, than P2. CB:) , Fmiher increase of the magnetic field does not lead to appearance of new details in the rotation cmve of ti·ansverse magnitoresistance. A different situation occurs in the bulk samples and wires of semiconductor alloys Bi, Bi1_xSbx. Investigated RDTM wires Bi-17at%Sb and bulk sample Bi-8at%Sb. The feature RDTM of semiconductor alloys Bi1_xSbx is that, when at H II C3 magnetoresistance in strong magnetic fields smaller than for H II C2, unlike semimetallic wires Bi and Bi1_xSbx. This fact should be considered in studies of cylindrical shape wires semiconductor alloys Bi1_xSbx. It is shown that the efficiency of the magnetic field at 77 K for two orders lower than at 4,2 K. In strong magnetic fields, the cross section of the Fenni surface functionally related with the cross section of the Fe1mi surface by a plane pe1pendicular to magnetic field direction and thus in the presence of SdH oscillations the Fe1mi surface can be restored, in paiiicular surface states.