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SM ISO690:2012 NIKOLAEVA, Albina, KONOPKO, Leonid, SHEPELEVICH, Vasily, GUSAKOVA, Sofia, BURDUJA, Denis. Magneto-thermoelectric properties of the semiconductor Bi-9at.%Sb foil. In: Materials Science and Condensed Matter Physics, Ed. 7, 16-19 septembrie 2014, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2014, Editia 7, p. 246. |
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Materials Science and Condensed Matter Physics Editia 7, 2014 |
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Conferința "Materials Science and Condensed Matter Physics" 7, Chișinău, Moldova, 16-19 septembrie 2014 | |
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Pag. 246-246 | |
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Compounds of bismuth antimony are the best the1moelectric materials known yet for applications at below room temperature. Physical prope1iies and technological parameters of these alloys depend on the inhomogeneous distribution of components due to dendritic segregation. [1] During highspeed crystallization the conditions for the diffusionless c1ystallization the bismuth- antimony alloys are created. Thus the strncture and properties of alloys obtained by rapid melt quenching, for small and medium cooling rates differ significantly. At create a the1moelectric devices is important not only to the electrical resistivity, differential thennopower and the thermal conductivity of n-and p-branches, dete1mining thennoelectric parameters, but also mechanical prope1iies which dete1mine the cycle life [2]. We present a study of the Inicrostrncture, mechanical prope1iies and electric and thennoelectric transpo1i in Bi-9at%,Sb foils. Bi-9at%Sb foils were prepared by the high velocity crystallization of a thin layer of melt on the inside of the polished surface of a rapidly rotating copper cylinder. The cooling rate of the liquid phase v=5*105 K/s. The Inicrostmcture of the foils were tested using a scanning electron microscope LEO 1455 by "Carl Zeiss". X-ray diffraction studies were canied out using a DRON - 3 copper radiation. The resistivity was measured by a standard four- probe method on a rectangular sample with size of approximately 0.7x0.3x0.004 cm3 It is shown that the temperature dependence of the resistance R(T) are exponential. The resistivity p(l 03 /T) it is possible to allocate a linear cmve dependence according expression exp (- ::r). This indicates that at Bi-9at%Sb samples, an energy gap for charge cmTiers fully opens in agreement with as well- established evolution of the energy bands in Bi1.xSbx upon doping. Samples in the f01m of monoc1ystalline foils obtained by ultrafast cooling rates v= 105 K/s, an increase a 2-fold in the microhm·dness showed compared to pure Bi, which is caused the influence of solid solution strengthening and hm·dening mechanism covalent forces in Bi1.xSbx solid solution with Bi atoms substituted by It is shown that the Sb. magnetothe1mopower in weak transverse magnetic field (0.4 T) reaches the value ex,= -190 µVIK. The high value of power factor P.f.=cx.2<J is 2.5*10-4 W/cm*K, open prospects of used of the given smnples in magneto- the1moelectric energy conve1iers. |
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