Hugge transverse magnetoresistance in the Bi wires with trigonal orientation
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NIKOLAEVA, Albina, KONOPKO, Leonid, TSURKAN, Ana, BOTNARY, Oxana. Hugge transverse magnetoresistance in the Bi wires with trigonal orientation. In: Materials Science and Condensed Matter Physics, Ed. 7, 16-19 septembrie 2014, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2014, Editia 7, p. 245.
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Materials Science and Condensed Matter Physics
Editia 7, 2014
Conferința "Materials Science and Condensed Matter Physics"
7, Chișinău, Moldova, 16-19 septembrie 2014

Hugge transverse magnetoresistance in the Bi wires with trigonal orientation


Pag. 245-245

Nikolaeva Albina12, Konopko Leonid12, Tsurkan Ana1, Botnary Oxana1
 
1 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,
2 International Laboratory of High Magnetic Fields and Low Temperatures
 
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Disponibil în IBN: 12 martie 2019


Rezumat

In recent years magnetoresistance effects in Bi have received a great deal of attention because of their unusual physics and important potential applications [1, 2, 3]. In this work we have shown, that high- quality single c1ystalline Bi- wires in glass cover with trigonal orientation along the wire axis have huge transverse magnetoresistance at B 11 bisector axis C2, which are higher then in film and bulk and in wires Bi with orientation (1011) along the wire axis. The crystalline structure of semimetal bismuth has a three-fold rotation symmetry about the trigonal axis. Three binaiy axes also making 120° which each other, and bissectrix axis is pe1pendicular to a binaiy axis. In Bi there are three equivalent electr·on energy ellipsoids in the conduction band which ai·e symmetrically located along the tr·igonal axis, and there is on hole ellipsoid. For the first time Bi wires in glass capillaiy with the tr·igonal orientation along the wire axis with diameters from 50 µm till 500 nm have been prepared using the method of zone recrystallization with a seeding agent. Single- crystallinity and c1ystallographic orientation are reliably detennined by X- Ray diffraction, angle rotation diagrains of tr·ansverse magnetoresistance and Shubnikov de Haas oscillations. Clean Shubnikov- de Haas (ShdH) oscillations in main c1ystallographic orientation were observed and indicative of the high quality of wires. From the temperature dependences of the amplitude of the ShdH oscillations were calculated agreement with those obtained in bulk Bi single crystals. It is shown that a "giant" magnetoresistance (H 1- I) H II C2 increase in Bi wires with tr·igonal orientation, linked to their high stmctural perfection, thanks to which region of the quadratic growth of the magnetoresistance R ~ 2 H increases with the diaineter d of the wires, and the tr·ansition to the linear dependence of R ~ H associated with the transition to the ultr·a-quantum magnetic fields. The huge transverse magnetoresistance reseai·ching in Bi- wires 650000% in magnetic field 14 Tat 4.2 K specifies that the wires with tr·igonal orientation can be used as wide- range field and current sensors.