The obtaining process and structure analysis of GaTe-CdTe  nano-composite
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CARAMAN, Iuliana; SPALATU, Nicolae; EVTODIEV, Igor; MIKLI, V.; CARAMAN, Mihail; LEONTIE, Liviu; UNTILA, Dumitru. The obtaining process and structure analysis of GaTe-CdTe  nano-composite. In: Materials Science and Condensed Matter Physics. Editia a 7-a, 16-19 septembrie 2014, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2014, p. 242.
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Materials Science and Condensed Matter Physics
Editia a 7-a, 2014
Conferința "Materials Science and Condensed Matter Physics"
Chișinău, Moldova, 16-19 septembrie 2014

The obtaining process and structure analysis of GaTe-CdTe  nano-composite


Pag. 242-242

Caraman Iuliana1, Spalatu Nicolae23, Evtodiev Igor2, Mikli V.3, Caraman Mihail2, Leontie Liviu4, Untila Dumitru2
 
1 “Vasile Alecsandri” University of Bacau,
2 State University of Moldova,
3 Tallinn University of Technology,
4 „Alexandru Ioan Cuza” University, Iasi
 
Disponibil în IBN: 12 martie 2019


Rezumat

The GaTe crystal, the semiconductor of AIIIBVI class, is composed of planar packages arranged in the order of Te-Ga-Ga-Te with strong ionic-covalent bonds within the package and weak polarization bonds between wraps. The elementary packages are arranged in a way that forms a monoclinic unit cell belonging to the C2 group of symmetry. Due to weak bonds between basic packing between atoms can easily diffuse different atoms. The impurity atoms interpose between stratified packages. This fact was proved in the paper by structural measurements (XRD), the study of the morphology of the outer surface and the interface between elementary packages by AFM and SEM methods. It was studied two types of composites obtained as a result of interleaving between the packaging of elemental Cd atoms at 620 K and 720 K during 24 hours. As it was shown in the XRD analysis, both obtained materials at 620 K and 720 K are composed of CdTe and GaTe nano-crystallites. The SEM image of surface of GaTe plates obtained in the Cd vapours at 620 K show wellpronounced two types of configurations. One configuration has the size of several tens of μm2, which actually covers more than 90% of the plate surface area and second configuration with micro-meter and sub-micrometer size. The analysis of the structure of GaTe plate surface after treatment in Cd vapours at 620 K is shown in the table. The outer surface of the samples obtained at 720 K is practically homogeneous coated with CdTe crystallites. The growth direction coincides with the C2 axis of the GaTe crystals. This work included the results of the XRD diffractograms analysis of the composites obtained by treatment in Cd vapours at 620 K and 720 K of GaSe crystal plates, the morphology of the outer surfaces of the GaTe plates before and after the heat treatment, the structure and the composition of composite blades at the interface between layered packing.