| SM ISO690:2012|
ABASHKIN, Vladimir; ACHIMOVA, Elena; PRISACAR, Alexandr; TRIDUH, Ghennadi; MESHALKIN, Alexei; STRONSKI, Alexander. Polarization holographic recording in nanomultilayers as2s3-se. In: Materials Science and Condensed Matter Physics. Editia a 7-a, 16-19 septembrie 2014, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2014, p. 215.
|Materials Science and Condensed Matter Physics
Editia a 7-a, 2014
Conferința "Materials Science and Condensed Matter Physics" |
Chișinău, Moldova, 16-19 septembrie 2014
Nanostructure formation has been explored for many kinds of materials, and this becomes a promising topic also for glasses. Among the glasses, the chalcogenides glasses (ChG) are interesting materials for investigation of nanostructural properties possessing unique characteristics which are different from those in oxide and halide glasses, i.e. molecular (low-dimensional) structures and semiconductor properties. However, studies on nano-chalcogenides are still requiring more experimental data in order to understand the mechanisms taking place in chalcogenide nanomultilayers [1, 2]. A variety of photo-induced phenomena have been utilized to realize surface corrugations and to fabricate surface relief micro/nano optical elements in thin layers of ChG directly by laser or ebeam exposure . Polarization dependence of these processes is of practical and theoretical importance. In this report polarization holographic recording of surface relief gratings in nanomultilayers As2S3/Se was studied. Nanomultilayers As2S3/Se were prepared by computer driven cyclic thermal vacuum deposition from two isolated boats with As2S3 and Se on constantly rotated substrate at room temperature in one vacuum deposition cycle. The technology allows depositing thin films with thicknesses from 0.005 up to 3.0μm. The control of the thickness was carried out in-situ during the thermal evaporation by interference thickness sensor at λ= 0.94μm. Overlapping part of samples contains alternating nanolayers of As2S3 with thickness of 12,4 nm and Se with thickness of 13 nm. The total number of nanolayers was 200. Outside and internal rings of layers on the substrate contain pure compositions of Se and As2S3 consequently. Control layers of Se and As2S3 were deposited at the same time onto the same substrate consequently through masks and used to check the composition and calculate the ratio of the sub-layer thicknesses in one modulation period. Resulting sample was As2S3/Se multilayer structure with total thickness 2500 nm with the composition modulation period 25 nm. Optical transmission was measured in 400-900 nm optical range in order to determine the refractive index, thickness and optical band-gap energy of pure As2S3 and Se layers and As2S3/Se multilayers. Diffraction gratings with 1 m period were recorded by two laser beams at different polarization (DPSS green laser, λ=532nm and power 100mW) with synchronous diffraction efficiency measurement by red laser (λ=650 nm) in first diffraction order.