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| Ultima descărcare din IBN: 2024-02-10 18:54 |
| Căutarea după subiecte similare conform CZU |
| 538.958 (16) |
| Fizica materiei condensate. Fizica solidului (349) |
 SM ISO690:2012SIRKELI, Vadim, YILMAZOGLU, Oktay, MOSKALENKO, Evgenii, KUPPERS, Franko, HARTNAGEL, Hans Ludwig. Effect of ge delta-doping of the Gan barrier on the performance of Ingan/Gan light-emitting diodes. In: Ştiinţă, educaţie, cultură, 10 februarie 2017, Comrat. Comrat: Universitatea de Stat din Comrat, 2017, Vol.2, pp. 330-331. ISBN 978-9975-83-040-9. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Ştiinţă, educaţie, cultură Vol.2, 2017 |
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Conferința "Ştiinţă, educaţie, cultură" Comrat, Moldova, 10 februarie 2017 | ||||||
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| CZU: 538.958 | ||||||
| Pag. 330-331 | ||||||
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The blue InGaN/GaN light-emitting diodes with undoped, heavily Ge-doped and Ge delta-doped in the GaN barrier are investigated numerically. The simulation results demonstrates that the Ge delta-doping in the GaN barrier lead to reducing the polarization-induced electric field between InGaN well and GaN barrier in the multiple quantum well, as well as suppressing quantum confined Stark effect, enhancing hole injection and electron confinement in the active region. The peak of internal quantum efficiency of 90.3%, turn-on voltage of 3.4 V and peak of light emission at 418 nm are found for this LED device structure. It is established that LED device with Ge delta-doped in the GaN barrier have better efficiency and optical output power performance compared with LED device structures with undoped and with wholly Ge-doped in the GaN barrier |
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| Cuvinte-cheie light-emitting diode, Gallium nitride, indium nitride, germanium doping, internal quantum efficiency |
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