Zinc selenide crystals doped with chromium impurity has a wide prospects for optoelectronics due to their marvellous luminescent properties in infra-red (IR) spectral region [1]. This ability gives opportunity to use as active or passive materials in optic or optoelectronic devices. Thus, the intensity in the IR spectral region tends to the saturation with increasing of impurity concentration what determines major problems in finding new possibilities to amplify luminescence properties of mentioned material. Photoluminescence (PL) properties of the ZnSe crystals doped separate and simultaneous with Yb and Cr impurities have been investigated in the 400-3000 nm wavelength region at 100 and 300K temperature. PL bands at 980, 1650 and 2000 nm have been observed in Yb doped ZnSe crystals at 100 K (Fig.). These PL bands in IR spectral region are compared with intracentered transitions of background impurity ions which are Cu and Cr. Multiplied increasing of the 980 nm PL band is achieved in the Yb and Cr co-doped ZnSe crystals in comparison with crystals of ZnSe:Cr or ZnSe:Yb (Fig.). The effect of amplification can be observed in main IR PL band, near 2 μm (Fig., inset) at room temperature. The two photon absorption can transport electron from valance to conduction band. Electron is directed to the Cr impurity where it can be placed to the first (2 μm PL band) or second (980 nm band) excited band. We expect from Yb ions to increase number of transitions to the CrZn 2+ ions which are placed in their neighbour. Analysing radiation ability in the edge spectral region at 100K in the ZnSe:Cr, ZnSe:Yb and ZnSe:Yb:Cr crystals we can establish lack of Yb ions influence and quenching effect is still remaining by Cr ions in the ZnSe:Yb:Cr crystals.