Two-dimensional materials, such as semiconductor transition metal dichalcogenides (TMDs), exhibit remarkable optical properties which are of great potential for applications in modern electronics and photonics [1]. In the past few years, the TMDs have attracted considerable attention of researchers as 2D materials that could play an important role in a wide range of topics in spintronics [2]. From this point of view, the investigations of the photoluminescence (PL) of bulk TMDs single crystals doped with Cr and Ti ions are really relevant. Fig.2 Temperature dependence of the PL integral intensity (squares) and decay time (triangles) of the same sample. Fig.1 Steady-state PL spectra of WS2:Cr crystal at different temperatures The investigated WS2, WSe2 and MoS2 crystals doped with Chromium and Titanium were obtained by the chemical vapor transport method using iodine as transport agent. At low temperatures, all samples have manifested a quite intensive broad band PL in the infrared (IR) spectral region. The spectral maxima were located at energies (Emax) about 0.4eV lower than the indirect band gap values of the investigated bulk TMDs compounds: Emax ≈ 0.93eV in the case of WS2:Cr, Ti and about 0.8eV in the case of WSe2 compounds. The nonmonotonic behavior of the PL integral intensity as function of temperature (Fig. 2) should be noted. Till T ≈ 60K, the intensity is raising, which was not observed for the weak broadband luminescence of the un-doped (as grown) TMDs samples [3]. At T >70K, the IR luminescence diminishes, although not so abruptly as the luminescence of excitons bound on halogen molecules (I2) intercalated in the van der Waals gap of these layered crystals. Possible radiative transitions that can determine the shape of the temperature dependences of spectral and temporal characteristics of the observed broadband IR luminescence are discussed, as well as nonradiative processes that lead to its quenching.