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DERMENJI, Lazari; BRUC, Leonid; GUC, Maxim; CURMEI, Nicolai; FEDOROV, Vladimir; GURIEVA, Galina; SHERBAN, Dormidont; SIMASHKEVICH, A.; SCHORR, S.; ARUSHANOV, Ernest. Deposition method and electro-physical properties of (AgxCu1-x)2ZnSn(S,Se)4 thin films. In: Materials Science and Condensed Matter Physics. Ediția a 9-a, 25-28 septembrie 2018, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2018, p. 310.
|Materials Science and Condensed Matter Physics
Ediția a 9-a, 2018
Conferința "International Conference on Materials Science and Condensed Matter Physics" |
Chișinău, Moldova, 25-28 septembrie 2018
The recent investigations of kesterite type quaternary compounds showed that one of the main detrimental problems, which limits the efficiency of the solar cells based on this materials, is related to Cu/Zn disorder giving rise to a high concentration of CuZn and ZnCu antisite point defects. To overcome this problem partial replacement of Cu or Zn cations in the classical Cu2ZnSn(S,Se)4 compounds was proposed. One of the promising cations was found to be Ag, which partially replaces the Cu and the solid solution of (AgxCu1-x)2ZnSn(S,Se)4 (ACZTSSe) is forming. In the present study ACZTSSe thin films with different Ag concentrations were deposited by the spray pyrolysis method, with subsequent annealing in S + Se atmosphere. In this way, the positive influence of Ag on the Cu/Zn disorder in kesterite type compounds was combined with one of the easiest and cheapest deposition methods. The method of the three source precursors (S1, S2 and S3) was used for preparation of the main solution, which was deposited using the method of spray pyrolysis in an atmosphere of carbon dioxide. The oxygen-free atmosphere is necessary to exclude the oxidation reactions of the kesterite components and molybdenum contact at the glass substrate during the pyrolysis, at the temperatures of 300 – 500C. From the analysis of the chemical composition of the thin film samples a good correlation of the measured Ag concentration with the initial one (dissolved in the deposited main solution) for samples with up to 15 % of Ag was found. Further increase of the Ag concentration resulted in the appearance of strong compositional inhomogeneities, which could be related to a poor dissolving of the Ag containing precursor in the main solution used for deposition. These results were also confirmed by the X-ray diffraction and Raman scattering studies. Here, the most intensive Bragg peaks in the pattern could be assigned to tetragonal ACZT(S,Se), while starting with 15 % of Ag the presence of the ternary compound Ag8Sn(S,Se)6 which crystallizes in the Argyrodite type structure becomes visible. The Raman spectra showed good crystalline quality of the thin films with absence of peaks related to the secondary phases. Raman peaks of the secondary phase Ag8Sn(S,Se)6 were not detected, most probably because of their low intensity and strong overlap with the peaks of main kesterite phase. From the investigation of the temperature dependence of resistivity no significant change in the electrical properties for the samples with low Ag concentration and strong increase of resistivity for the samples with 20 % of Ag were found. The later could be related to the influence of secondary phases and compositional inhomogeneities found for this sample.