Selective wet etching of chalcogenide thin films
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LOGHINA (BEŢ), Liudmila, VLCEK, Miroslav. Selective wet etching of chalcogenide thin films. In: The International Conference dedicated to the 55th anniversary from the foundation of the Institute of Chemistry of the Academy of Sciences of Moldova, 28-30 mai 2014, Chișinău. Chișinău, Republica Moldova: Institutul de Chimie al AȘM, 2014, p. 88.
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The International Conference dedicated to the 55th anniversary from the foundation of the Institute of Chemistry of the Academy of Sciences of Moldova 2014
Conferința "The International Conference dedicated to the 55th anniversary from the foundation of the Institute of Chemistry of the Academy of Sciences of Moldova"
Chișinău, Moldova, 28-30 mai 2014

Selective wet etching of chalcogenide thin films


Pag. 88-88

Loghina (Beţ) Liudmila, Vlcek Miroslav
 
University of Pardubice
 
Disponibil în IBN: 23 ianuarie 2019


Rezumat

Chalcogenide glasses based on sulphide, selenide, telluride and their rare earth doped compositions are being actively investigated worldwide. One of the interesting applications of these materials is in the photolithography, where they serve as high resolution inorganic photoresists [1]. The bulk samples of different compositions in systems As40S60-xSex (x=0-60) were prepared by direct thermal synthesis from high purity elements (99.999%) in evacuated quartz ampoules (5000C, 24 h; 8500C, 5 h). Thin films were prepared by vacuum thermal evaporation from bulk glass on silica glass substrates. In this work the etching characteristics of As-S-Se thin films in amine based etching solutions for thin films with thicknesses 0,9-1,0 μm were investigated. Etching rate is significantly influenced by sample prehistory, type and concentration of amines. In figure we present kinetics of dissolution of as-evaporated, annealed and exposed As40S50Se10 thin films in organic solution of n-PrNH2. This selectivity of the dissolution can be explained by the mechanism of a chemical interaction between arsenic sulphide (or selenide) and amines [2]. Also the temperature dependences of dissolution rates were studied. From them the energies of activation of dissolution were calculated according to Arrenius type equation: W = W0*exp(-Ea/kT), were W0 is a preexponential parameter. As an example, the activation energies of dissolution As40S10Se50 thin film: Ea (as-evaporated) = 0.33 eV (31.9 kJ/mol) Ea (annealed 8h/1600C) = 0.51 eV (48.5 kJ/mol) Ea (exposed by LED (λ=630 nm) = 0.41 eV (39.7 kJ/mol) The different values of activation energies of the as-evaporated and annealed films can be explained by the different mechanism of their interactions with amines and as a consequence, the different rates of dissolution. The utilization of chalcogenide thin films in gray scale lithography is based on different dissolution rates of exposed and unexposed parts of the film.