Interaction between background impurities and Gd/Yb elements in ZnSe single crystals
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GONCEARENCO, Evghenii. Interaction between background impurities and Gd/Yb elements in ZnSe single crystals. In: Materials Science and Condensed Matter Physics, Ed. 9, 25-28 septembrie 2018, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2018, Ediția 9, p. 104.
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Materials Science and Condensed Matter Physics
Ediția 9, 2018
Conferința "International Conference on Materials Science and Condensed Matter Physics"
9, Chișinău, Moldova, 25-28 septembrie 2018

Interaction between background impurities and Gd/Yb elements in ZnSe single crystals

CZU: 538.9+547:535.37+621.315.592

Pag. 104-104

Goncearenco Evghenii
 
Moldova State University
 
Disponibil în IBN: 17 ianuarie 2019


Rezumat

There are a lot of structural defects and background impurities in the wide band-gap ZnSe semiconductor. The source materials contain these background impurities, which have small atomic and ionic radius and are very soluble in the ZnSe crystals. The most common elements are from the 1st and the 7th group, which substitute zinc and selenium atoms respectively. At the same time, elements from the transition metals group (Cu, Cr, Mn etc.) can also be as background impurities, creating new radiative bands. Rare earth elements, as doping material, could interact with background impurities and influence on ZnSe crystals radiative efficiency. In this paper, the Gd and Yb influence on ZnSe single crystals radiative properties would be discussed.  The ZnSe single crystal have been grown by physical vapour transport method and doped with Gd or Yb impurities during growth process. Samples with 337 nm and and 532 nm laser source were excited. Photoluminescence (PL) in visible and infrared (IR) spectral region at 80K and 300K have been recorded.  Radiative bands in the edge and IR spectral regions are shown in the Figure 1. Edge PL intensity after doping with the rare earth ions is amplified. Low amount of the Gd(Yb) doping impurity multiplies the edge PL intensity with the following quench after the impurity amount increases. There are no PL bands in the long wavelength spectrum responsible for impurity luminescence. PL bands intensity around 980 nm and 2000 nm increases while impurity amount increases in the crystals. Low amount of the Gd impurity in the ZnSe enlarges PL band‘s full width at half maximum (1900 nm) in the IR region. Position of the PL bands maximum are constant with the temperature change and it is characteristic of the intracentre transition. The Cr2+ ions, as background impurities in the ZnSe, create PL bands in the IR spectral region [1]. Rare earth ions substitute zinc ions or fill vacancy site of zinc sublattice. In that case, the selenium vacancy concentration increases and will cause edge PL band maximum shift to the long wavelength spectral region.