The additive Matthiessen‘s rule is the simplest and most widely used rule for the rapid experimental characterization and modeling of the charge carrier mobility. However, the error when using this rule can be higher than 40% and the contribution of the assumed additional scattering channels due to the difference between the experimental data and results calculated based on this rule can be misestimated by several times.  In this study, a semi-additive equation is proposed for calculating the total charge carrier mobility by considering the energy dependence of the relaxation time, as well as several equations for the Hall factor. The proposed universal methods are applicable to any semiconductor material and any number of scattering mechanisms. The proposed methods are independent of the material properties and the errors are 10-20 times smaller compared with Matthiessen‘s rule. Calculations with accuracy of 99% are demonstrated for materials with polar-optical phonon, acoustic phonon via the piezoelectric potential, ionized, and neutral impurity scattering. The proposed method is extended to the deformation potential, dislocation, localized defect, alloy potential, and dipole scattering. Fig. Example of the calculation of mobility (μ) and Hall factor (r) for bulk ZnO. Experimental data from a previous study [1] are shown as symbols. μ_τ and r_τ are exact values obtained by integration of relaxation time, μ_M is based on Matthiessen‘s rule, rP is based on partial rule, μ* and r* are obtained using proposed equations. The inset illustrates the errors in Hall mobility (μr).