Novel approach for calculating the charge carrier mobility in semiconductor materials
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COLIBABA, Gleb. Novel approach for calculating the charge carrier mobility in semiconductor materials. In: Materials Science and Condensed Matter Physics. Ediția a 9-a, 25-28 septembrie 2018, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2018, p. 84.
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Materials Science and Condensed Matter Physics
Ediția a 9-a, 2018
Conferința "International Conference on Materials Science and Condensed Matter Physics"
Chișinău, Moldova, 25-28 septembrie 2018

Novel approach for calculating the charge carrier mobility in semiconductor materials

CZU: 537.226.33+538.9+621.382.2
Pag. 84-84

Colibaba Gleb
State University of Moldova
Disponibil în IBN: 16 ianuarie 2019


The additive Matthiessen‘s rule is the simplest and most widely used rule for the rapid experimental characterization and modeling of the charge carrier mobility. However, the error when using this rule can be higher than 40% and the contribution of the assumed additional scattering channels due to the difference between the experimental data and results calculated based on this rule can be misestimated by several times.  In this study, a semi-additive equation is proposed for calculating the total charge carrier mobility by considering the energy dependence of the relaxation time, as well as several equations for the Hall factor. The proposed universal methods are applicable to any semiconductor material and any number of scattering mechanisms. The proposed methods are independent of the material properties and the errors are 10-20 times smaller compared with Matthiessen‘s rule. Calculations with accuracy of 99% are demonstrated for materials with polar-optical phonon, acoustic phonon via the piezoelectric potential, ionized, and neutral impurity scattering. The proposed method is extended to the deformation potential, dislocation, localized defect, alloy potential, and dipole scattering. Fig. Example of the calculation of mobility (μ) and Hall factor (r) for bulk ZnO. Experimental data from a previous study [1] are shown as symbols. μτ and rτ are exact values obtained by integration of relaxation time, μM is based on Matthiessen‘s rule, rP is based on partial rule, μ* and r* are obtained using proposed equations. The inset illustrates the errors in Hall mobility (μr).