Epitaxial films of cadmium selenide attract the attention of researchers in connection with the possibility of their use as positionally sensitive photodetectors (PSP) of visible light [1]. In particular, CdSe / mica epitaxial films differ in the content of various kinds of point defects (impurity and intrinsic), as well as packing defects, on which the injected charge carriers effectively dissipate [2]. It determines the mechanisms of current transmission through CdSe films.  In order to clarify the nature of photoelectric phenomena and optimize the characteristics of the PSP, it is necessary to know the patterns of carrier transport in epitaxial CdSe / mica layers. A current limited by the space charge was used as an effective method for determining the drift mobility and the concentration of equilibrium carriers. The advantage of this method is that it makes it possible to determine the mobility both from the transit time and from the current value, as well as the concentration of equilibrium charge carriers.  Epitaxial CdSe / mica layers were grown by thermal evaporation of the initial CdSe material in a quasi-closed volume. The evaporation temperature of CdSe was maintained at 650° C, and the temperature of the mica substrate was 500° C. The layers were grown in the form of a disk with a radius of R = 9 mm and a thickness of D = 10 μm. The specific dark resistance of the samples had values (108 – 109) Ω∙cm.  To produce samples of a film "sandwich" - In-CdSe-In structure, the CdSe / mica layers were separated from mica by thermal shock. On the opposite sides, indium films of rectangular shape with a thickness of ≃ 1 μm and an area of 0.16 cm2 were deposited on the surface of the resulting semiconductor layer by thermal evaporation.  The dark current-voltage characteristics (CVC) of the sandwich structure at 300 K were investigated. The voltage on the sample electrodes varied from 0 to 100 V. The measured current-voltage characteristics represent a straight line emerging from the origin with an exponent close to two. The linear character of the CVC is described by the Child law J~εμU2 / D3 and characterizes the current of injected charge carriers in epitaxial CdSe / mica layers that does not contain traps.