Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
736 0 |
SM ISO690:2012 SIRBU, Lilian, MIHAI, Laura, DǍNILǍ, Mihai, ŢUCUREANU, Vasilica, MATEI, Alina, COMANESCU, Florin Constantin, BARACU, Angela Mihaela, ŞTEFAN, Angela, DASCĂLU, Traian, MULLER, Raluca. Integrating THz sensors/structures through electrowetting in dielectrics (EWOD) for security applications. In: NATO Science for Peace and Security Series B: Physics and Biophysics, 2017, nr. 1, pp. 85-96. ISSN 1874-6500. DOI: https://doi.org/10.1007/978-94-024-1093-8_12 |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
NATO Science for Peace and Security Series B: Physics and Biophysics | |
Numărul 1 / 2017 / ISSN 1874-6500 | |
|
|
DOI: https://doi.org/10.1007/978-94-024-1093-8_12 | |
Pag. 85-96 | |
Rezumat | |
We developed a combination of technology for deposition contacts/ wires upon nanoporous InP thin film structures and RF sputtering InP films. Indium phosphide (InP) films were deposited onto glass substrate using RF magnetron sputtering by varying the substrate temperature (50-100°C), under constant argon pressure (6.3·10−3Bar) and RF power (100 W). To have good optimisation of growing parameters of LT-InP films we use several characterization techniques, Raman, FTIR, XRD, and THz spectroscopy, respectively. Doping with Ga ions was used to induce disordered in InP film, to reduce the optical recombination in IR spectra. |
|
Cuvinte-cheie InP film, Porous InP, RF sputtering, THz antenna, THz imaging, THzspectroscopy |
|
|
DataCite XML Export
<?xml version='1.0' encoding='utf-8'?> <resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'> <identifier identifierType='DOI'>10.1007/978-94-024-1093-8_12</identifier> <creators> <creator> <creatorName>Sîrbu, L.</creatorName> <affiliation>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu", Moldova, Republica</affiliation> </creator> <creator> <creatorName>Mihai, L.</creatorName> <affiliation>Institutul Naţional pentru Fizica Laserilor, Plasmei şi Radiaţiei, România</affiliation> </creator> <creator> <creatorName>Dănilă, M.</creatorName> <affiliation>Institutul National de Cercetare si Dezvoltare pentru Microtehnologii IMT-Bucuresti, România</affiliation> </creator> <creator> <creatorName>Ţucureanu, V.</creatorName> <affiliation>Institutul National de Cercetare si Dezvoltare pentru Microtehnologii IMT-Bucuresti, România</affiliation> </creator> <creator> <creatorName>Matei, A.</creatorName> <affiliation>Institutul National de Cercetare si Dezvoltare pentru Microtehnologii IMT-Bucuresti, România</affiliation> </creator> <creator> <creatorName>Comanescu, F.</creatorName> <affiliation>Institutul National de Cercetare si Dezvoltare pentru Microtehnologii IMT-Bucuresti, România</affiliation> </creator> <creator> <creatorName>Baracu, A.</creatorName> <affiliation>Institutul National de Cercetare si Dezvoltare pentru Microtehnologii IMT-Bucuresti, România</affiliation> </creator> <creator> <creatorName>Ştefan, A.G.</creatorName> <affiliation>Institutul Naţional pentru Fizica Laserilor, Plasmei şi Radiaţiei, România</affiliation> </creator> <creator> <creatorName>Dascălu, T.</creatorName> <affiliation>Institutul Naţional pentru Fizica Laserilor, Plasmei şi Radiaţiei, România</affiliation> </creator> <creator> <creatorName>Muller, R.</creatorName> <affiliation>Institutul National de Cercetare si Dezvoltare pentru Microtehnologii IMT-Bucuresti, România</affiliation> </creator> </creators> <titles> <title xml:lang='en'>Integrating THz sensors/structures through electrowetting in dielectrics (EWOD) for security applications</title> </titles> <publisher>Instrumentul Bibliometric National</publisher> <publicationYear>2017</publicationYear> <relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1874-6500</relatedIdentifier> <subjects> <subject>InP film</subject> <subject>Porous InP</subject> <subject>RF sputtering</subject> <subject>THz antenna</subject> <subject>THz imaging</subject> <subject>THzspectroscopy</subject> </subjects> <dates> <date dateType='Issued'>2017-01-02</date> </dates> <resourceType resourceTypeGeneral='Text'>Journal article</resourceType> <descriptions> <description xml:lang='en' descriptionType='Abstract'><p>We developed a combination of technology for deposition contacts/ wires upon nanoporous InP thin film structures and RF sputtering InP films. Indium phosphide (InP) films were deposited onto glass substrate using RF magnetron sputtering by varying the substrate temperature (50-100°C), under constant argon pressure (6.3·10<sup>−3</sup>Bar) and RF power (100 W). To have good optimisation of growing parameters of LT-InP films we use several characterization techniques, Raman, FTIR, XRD, and THz spectroscopy, respectively. Doping with Ga ions was used to induce disordered in InP film, to reduce the optical recombination in IR spectra.</p></description> </descriptions> <formats> <format>uri</format> </formats> </resource>