Integrating THz sensors/structures through electrowetting in dielectrics (EWOD) for security applications
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SIRBU, Lilian; MIHAI, Laura; DǍNILǍ, Mihai; ŢUCUREANU, Vasilica; MATEI, Alina; COMANESCU, Florin Constantin; BARACU, Angela Mihaela; ŞTEFAN, Angela; DASCĂLU, Traian; MULLER, Raluca. Integrating THz sensors/structures through electrowetting in dielectrics (EWOD) for security applications. In: NATO Science for Peace and Security Series B: Physics and Biophysics. 2017, nr. 1, pp. 85-96. ISSN 1874-6500.
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NATO Science for Peace and Security Series B: Physics and Biophysics
Numărul 1 / 2017 / ISSN 1874-6500

Integrating THz sensors/structures through electrowetting in dielectrics (EWOD) for security applications


DOI: 10.1007/978-94-024-1093-8_12
Pag. 85-96

Sirbu Lilian123, Mihai Laura4, Dǎnilǎ Mihai5, Ţucureanu Vasilica5, Matei Alina5, Comanescu Florin Constantin5, Baracu Angela Mihaela5, Ştefan Angela4, Dascălu Traian4, Muller Raluca5
 
1 Ghitu Institute of Electronic Engineering and Nanotechnology,
2 University of Ottawa,
3 University of Sherbrooke,
4 National Institute for Laser, Plasma and Radiation Physics (INFLPR),
5 National Institute for Research and Development in Microtechnologies
 
Disponibil în IBN: 18 decembrie 2018


Rezumat

We developed a combination of technology for deposition contacts/ wires upon nanoporous InP thin film structures and RF sputtering InP films. Indium phosphide (InP) films were deposited onto glass substrate using RF magnetron sputtering by varying the substrate temperature (50-100°C), under constant argon pressure (6.3·10−3Bar) and RF power (100 W). To have good optimisation of growing parameters of LT-InP films we use several characterization techniques, Raman, FTIR, XRD, and THz spectroscopy, respectively. Doping with Ga ions was used to induce disordered in InP film, to reduce the optical recombination in IR spectra.

Cuvinte-cheie
InP film, Porous InP, RF sputtering, THz antenna, THz imaging, THzspectroscopy