Electron-beam recording of the diffraction gratings in the (As4S3Se3)1-xSnx amorphous thin films
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YOVU, M., SERGEEV, Sergei, IASENIUC, Oxana. Electron-beam recording of the diffraction gratings in the (As4S3Se3)1-xSnx amorphous thin films. In: Optoelectronics and Advanced Materials, Rapid Communications, 2018, nr. 7-8(12), pp. 377-380. ISSN 1842-6573.
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Optoelectronics and Advanced Materials, Rapid Communications
Numărul 7-8(12) / 2018 / ISSN 1842-6573 /ISSNe 2065-3824

Electron-beam recording of the diffraction gratings in the (As4S3Se3)1-xSnx amorphous thin films


Pag. 377-380

Yovu M., Sergeev Sergei, Iaseniuc Oxana
 
Institute of Applied Physics
 
 
Disponibil în IBN: 8 decembrie 2018


Rezumat

Thin films of (As4S3Se3)1-xSnx (х=0; 0.01; 0.03; 0.05) chalcogenide glasses have been used for the direct e-beam recording of the diffraction grating structures. The influences of the amorphous film composition on properties of the diffraction gratings were shown. The dependence of the diffraction efficiency of gratings with the period of Δ=1 μm and Δ=2 μm versus the radiation dose was investigated. An enhancement of the diffraction efficiency caused by the uniform laser irradiation was observed for gratings recorded in the As4S3Se3:Sn thin films.

Cuvinte-cheie
amorphous thin films, chalcogenide glasses, Electron-beam recording,

Diffractive gratings