High-field magnetotransport in Cu2ZnGeS4 single crystals
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HAJDEU-CHICAROSH, Elena; LÄHDERANTA, Erkki; GUK, Maxim; LISUNOV, Konstantin; SHAKHOV, Mikhail; ZAKHARCHUK, Ivan A.; LEVCENKO, Sergiu; ARUSHANOV, Ernest. High-field magnetotransport in Cu2ZnGeS4 single crystals. In: Solar Energy. 2018, nr. 172, pp. 184-190. ISSN 0038-092X.
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Solar Energy
Numărul 172 / 2018 / ISSN 0038-092X

High-field magnetotransport in Cu2ZnGeS4 single crystals

DOI: 10.1016/j.solener.2018.04.043
Pag. 184-190

Hajdeu-Chicarosh Elena12, Lähderanta Erkki1, Guk Maxim13, Lisunov Konstantin13, Shakhov Mikhail14, Zakharchuk Ivan A.1, Levcenko Sergiu5, Arushanov Ernest3
1 Lappeenranta University of Technology,,
2 Institute of Applied Physics, Academy of Sciences of Moldova,
3 Institute of Applied Physics,
4 Ioffe Physical-Technical Institute, RAS,
5 Helmholtz-Centre Berlin for Materials and Energy
Disponibil în IBN: 6 decembrie 2018


The quaternary chalcogenides, attracting much attention in recent time as promising solar energy materials, permit an effective optimization of their composition by the Ge incorporation. In particular, this implies an interest to the Cu2ZnGeS4 compound, which utilization requires, however, a deeper understanding of its electronic properties in general. Here, we investigate magnetotransport of the p-type Cu2ZnGeS4 single crystals, including resistivity, ρ (T), magnetoresistance (MR) and Hall effect, in pulsed magnetic fields up to B = 20 T. The Mott variable-range hopping charge transfer has been established within a broad temperature interval of T between ∼100 and 200 K by investigations of ρ (T) in zero field. The positive and negative contributions to MR have been observed, attributing them to shrinkage of the impurity wave functions by the magnetic field and to the destructive interference of the hopping charge carriers, respectively. Observation of the negative Hall coefficient, RH (T), exhibiting the dependence close to that of ρ (T), gives a strong support to the Mott conduction mechanism in our p-type Cu2ZnGeS4 material. In addition, the conductivity, connected with thermal activation of holes on the mobility edge, Ec, has been identified both below and above the Mott conduction interval. Finally, the joint analysis of the ρ (T) and MR data has yielded a series of important microscopic parameters. These include such details of the hole spectrum in the acceptor band, as its semi-width, W, the density of localized states, g (μ), at the Fermi level, μ the positions of μ and Ec, as well as values of the localization radius of holes, a, and of the acceptor concentration, NA.

Hall effect, Magnetoresistance,

Hopping conduction, Quaternary chalcogenides