Ellipsometric investigations of a-As2S3 thin films obtained by RF magnetron sputtering
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BAŞCHIR, Laurenţiu V., OPRAN, Constantin, SAVASTRU, Dan, MICLOS, Sorin I., YOVU, M., POPESCU, Aurelian. Ellipsometric investigations of a-As2S3 thin films obtained by RF magnetron sputtering. In: Chalcogenide Letters, 2018, nr. 4(15), pp. 199-205. ISSN 1584-8663.
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Chalcogenide Letters
Numărul 4(15) / 2018 / ISSN 1584-8663

Ellipsometric investigations of a-As2S3 thin films obtained by RF magnetron sputtering


Pag. 199-205

Başchir Laurenţiu V.1, Opran Constantin2, Savastru Dan1, Miclos Sorin I.1, Yovu M.3, Popescu Aurelian1
 
1 National Institute for Optoelectronics INOE2000, Magurele,
2 University Politehnica of Bucharest,
3 Institute of Applied Physics, Academy of Sciences of Moldova
 
Disponibil în IBN: 10 august 2018


Rezumat

In this paper we report the investigation of optical properties of As2S3 amorphous chalcogenide thin films. Arsenic trisulfide is well known amorphous material. As2S3 thin films have important applications in optoelectronics. The most usual method of fabrication is thermal evaporation in vacuum which is known for deposition ofa-As2S3 films with high probability of oxidation in contact with ambient environment. In this paperwe studied the optical properties of As2S3 thin films obtained by a different method as RF magnetron sputtering. Ellipsometric measurements permit the studies of the film optical constants in high absorption spectral domain which give the possibility to determine the own oscillator frequencies. Fitting model based on the well-established exponential absorption inside the band gap tail and Tauc fundamental absorption was used. Thin films of a-As2S3 comparison were made on Si and glass substrates.

Cuvinte-cheie
Chalcogenide amorphous materials, Ellipsometry, Photonics, Plasmonics