Thermoelectric Properties and Surface States in the Layers of Bi2Te3 Topological Insulators
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NIKOLAEVA, Albina, KONOPKO, Leonid, ROGATSKII, K., BODYUL, P., GHERGISHAN, Igor. Thermoelectric Properties and Surface States in the Layers of Bi2Te3 Topological Insulators. In: Surface Engineering and Applied Electrochemistry, 2018, nr. 3(54), pp. 273-278. ISSN 1068-3755. DOI: https://doi.org/10.3103/S1068375518030092
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Surface Engineering and Applied Electrochemistry
Numărul 3(54) / 2018 / ISSN 1068-3755 /ISSNe 1934-8002

Thermoelectric Properties and Surface States in the Layers of Bi2Te3 Topological Insulators

DOI: https://doi.org/10.3103/S1068375518030092

Pag. 273-278

Nikolaeva Albina12, Konopko Leonid12, Rogatskii K.2, Bodyul P.3, Ghergishan Igor1
 
1 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,
2 Institute of Low Temperatures and Structural Research, PAS,
3 Technical University of Moldova
 
Disponibil în IBN: 10 august 2018


Rezumat

The thermoelectric properties and Shubnikov–de Haas (SdH) oscillations of monocrystalline layers of a topological insulator (ТI) of n-type bismuth telluride were investigated. The monocrystalline Bi2Te3 layers were fabricated by the mechanical exfoliations of layers from a monocrystalline ingot of the appropriate composition. The cyclotron effective masses, the Dingle temperature, and the quantum mobilities of charge carriers were calculated from the experimental data by SdH oscillations both in longitudinal (H ║ I) and in perpendicular (H ⊥ I) magnetic fields at temperatures in the range of 2.1–4.2 K. It was found that the phase shift of the Landau levels index is 0.5 both for the parallel and for the perpendicular magnetic fields associated with the Berry phase of surface states. The power factor in the temperature range of 2–300 K was calculated from the temperature dependences of resistance and thermal e.m.f. It was stated that the power factor α2σ has a maximum value in the temperature range of 100–250 K, which corresponds to the maximum values for perfect monocrystals described in the literature. Taking into account that the heat conductivity in the thin layers is essentially lower than in the bulk samples, it is reasonable to expect a considerable increase in the thermoelectric efficiency over a wide temperature range, which is of great importance for the development of new highly effective thermoelectric materials based on thinner Bi2Te3 ТI layers for practical applications in thermogenerators and coolers.

Cuvinte-cheie
bismuth telluride, thermoelectricity, topological insulators,

SdH oscillations, single-crystal layers