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SM ISO690:2012 CENGIZ, Asuman, CHUMAKOV, Yurii, ERDEM, Mehmet, ŞALE, Yasin, MIKAILZADE, Faik A., SEYIDOV, Mir Hasan Yu. Origin of the optical absorption of TlGaSe2 layered semiconductor in the visible range. In: Semiconductor Science and Technology, 2018, vol. 33, p. 0. ISSN 0268-1242. DOI: https://doi.org/10.1088/1361-6641/aac97b |
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Semiconductor Science and Technology | |||||
Volumul 33 / 2018 / ISSN 0268-1242 | |||||
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DOI: https://doi.org/10.1088/1361-6641/aac97b | |||||
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The results from the investigation of optical absorption in TlGaSe2 layered bulk semiconductor in the wavelength range of 400-900 nm between the temperatures of 19 K and 300 K are presented and discussed. In the results, the layered semiconductor TlGaSe2 is interpreted as a direct band gap semiconductor with a band gap of about 2.04-2.14 eV at 300 K. Additionally, the optical transmission spectrum of TlGaSe2 exhibited some peculiarities, which were attributed to indirect allowed interband transitions. It has been explained that the optical absorption edge of TlGaSe2 can be characterized by the presence of an Urbach-like tail as well as a high-energy Tauc absorption region. The Tauc slope and Tauc energy gap were extracted from the absorption coefficient data by using the Tauc procedure. The results revealed that the 'amorphized' structure of TlGaSe2 which is prominent in near conduction/valance band energy states, cannot be ignored for the understanding of the optical transition mechanisms in this semiconductor. |
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Cuvinte-cheie Electronic band structure calculation, optical energy band gap semiconductor, Taucs energy |
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Crossref XML Export
<?xml version='1.0' encoding='utf-8'?> <doi_batch version='4.3.7' xmlns='http://www.crossref.org/schema/4.3.7' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.crossref.org/schema/4.3.7 http://www.crossref.org/schema/deposit/crossref4.3.7.xsd'> <head> <doi_batch_id>ibn-64979</doi_batch_id> <timestamp>1711671493</timestamp> <depositor> <depositor_name>Information Society Development Instiute, Republic of Moldova</depositor_name> <email_address>idsi@asm.md</email_address> </depositor> </head> <body> <journal> <journal_metadata> <full_title>Semiconductor Science and Technology</full_title> <issn media_type='print'>02681242</issn> </journal_metadata> <journal_issue> <publication_date media_type='print'> <year>2018</year> </publication_date> <issue></issue> </journal_issue> <journal_article publication_type='full_text'><titles> <title>Origin of the optical absorption of TlGaSe2 layered semiconductor in the visible range</title> </titles> <contributors> <person_name sequence='first' contributor_role='author'> <given_name>Asuman</given_name> <surname>Cengiz</surname> </person_name> <person_name sequence='additional' contributor_role='author'> <given_name>Iurie</given_name> <surname>Ciumacov</surname> </person_name> <person_name sequence='additional' contributor_role='author'> <given_name>Mehmet</given_name> <surname>Erdem</surname> </person_name> <person_name sequence='additional' contributor_role='author'> <given_name>Yasin</given_name> <surname>Şale</surname> </person_name> <person_name sequence='additional' contributor_role='author'> <given_name>Faik A.</given_name> <surname>Mikailzade</surname> </person_name> <person_name sequence='additional' contributor_role='author'> <given_name>Mir Hasan Yu</given_name> <surname>Seyidov</surname> </person_name> </contributors> <publication_date media_type='print'> <year>2018</year> </publication_date> <pages> <first_page>0</first_page> <last_page>0</last_page> </pages> <doi_data> <doi>10.1088/1361-6641/aac97b</doi> <resource>http://www.crossref.org/</resource> </doi_data> </journal_article> </journal> </body> </doi_batch>