|Ultima descărcare din IBN:|
| SM ISO690:2012|
POTLOG, Tamara; LUNGU, Ion; BOTNARIUC, Vasile; RAEVSCHI, Simion; WORASAWAT, S.; MIMURA, Hidenori; GORCEAC, Leonid. Effect of carrier gas and vacuum annealing on the physical properties of ZnO thin films doped with gallium by chemical spray pyrolysis. In: Telecommunications, Electronics and Informatics. 6, 24-27 mai 2018, Chișinău. Chișinău, Republica Moldova: Tehnica UTM, 2018, pp. 145-149. ISBN 978-9975-45-540-4.
|Telecommunications, Electronics and Informatics
Conferința "Telecommunications, Electronics and Informatics" |
Chișinău, Moldova, 24-27 mai 2018
Structural, optical and electrical properties of zinc oxide thin films doped with 2% Ga, annealed in the vacuum at the same temperature and obtained onto glass substrates by the chemical spray pyrolysis method in the different gas atmospheres were investigated by X-ray Diffraction (XRD), UV-VIS spectrophotometry and Hall measurements, respectively. XRD studies revealed that all films were polycrystalline in nature, with a hexagonal wurtzite crystal structure and a predominant (002) c-axis orientation. All ZnO:Ga thin films had higher than 80 % transmittances in the visible region. Doping with 2% Ga led to a decrease in the optical band gap indifferent of the nature of the carrier gas. The synthesis of ZnO thin films with 2% Ga doping and annealing in the same conditions in Ar and O2 atmospheres led to the lower conductivity with electron concentration of 1016 cm−3.
ZnO thin films, carrier gas, electrical parameters,
spray pyrolysis, optical properties