Effect of carrier gas and vacuum annealing on the physical properties of ZnO thin films doped with gallium by chemical spray pyrolysis
Închide
Articolul precedent
Articolul urmator
78 3
Ultima descărcare din IBN:
2019-05-22 09:23
SM ISO690:2012
POTLOG, Tamara; LUNGU, Ion; BOTNARIUC, Vasile; RAEVSCHI, Simion; WORASAWAT, S.; MIMURA, Hidenori; GORCEAC, Leonid. Effect of carrier gas and vacuum annealing on the physical properties of ZnO thin films doped with gallium by chemical spray pyrolysis. In: Telecommunications, Electronics and Informatics. 6, 24-27 mai 2018, Chișinău. Chișinău, Republica Moldova: Tehnica UTM, 2018, pp. 145-149. ISBN 978-9975-45-540-4.
EXPORT metadate:
Google Scholar
Crossref
CERIF
BibTeX
DataCite
Dublin Core
Telecommunications, Electronics and Informatics
6, 2018
Conferința "Telecommunications, Electronics and Informatics"
Chișinău, Moldova, 24-27 mai 2018

Effect of carrier gas and vacuum annealing on the physical properties of ZnO thin films doped with gallium by chemical spray pyrolysis


Pag. 145-149

Potlog Tamara1, Lungu Ion1, Botnariuc Vasile1, Raevschi Simion1, Worasawat S.2, Mimura Hidenori2, Gorceac Leonid1
 
1 State University of Moldova,
2 Research Institute of Electronics, Shizuoka University
 
Disponibil în IBN: 29 mai 2018


Rezumat

Structural, optical and electrical properties of zinc oxide thin films doped with 2% Ga, annealed in the vacuum at the same temperature and obtained onto glass substrates by the chemical spray pyrolysis method in the different gas atmospheres were investigated by X-ray Diffraction (XRD), UV-VIS spectrophotometry and Hall measurements, respectively. XRD studies revealed that all films were polycrystalline in nature, with a hexagonal wurtzite crystal structure and a predominant (002) c-axis orientation. All ZnO:Ga thin films had higher than 80 % transmittances in the visible region. Doping with 2% Ga led to a decrease in the optical band gap indifferent of the nature of the carrier gas. The synthesis of ZnO thin films with 2% Ga doping and annealing in the same conditions in Ar and O2 atmospheres led to the lower conductivity with electron concentration of 1016 cm−3.

Cuvinte-cheie
ZnO thin films, carrier gas, electrical parameters,

spray pyrolysis, optical properties