Photoluminescence study of Eu-doped Ga2O3 and GaN nanowires and nanoparticles produced by hydrothermal growth
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2018-07-24 14:29
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RUSU, Emil, URSACHI, Veaceslav, CULEAC, Ion, RAEVSKY, Simion, VLAZAN, Paulina. Photoluminescence study of Eu-doped Ga2O3 and GaN nanowires and nanoparticles produced by hydrothermal growth. In: Telecommunications, Electronics and Informatics, Ed. 5, 20-23 mai 2015, Chișinău. Chișinău, Republica Moldova: 2015, Ed. 5, pp. 185-189. ISBN 978-9975-45-377-6.
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Telecommunications, Electronics and Informatics
Ed. 5, 2015
Conferința "Telecommunications, Electronics and Informatics"
5, Chișinău, Moldova, 20-23 mai 2015

Photoluminescence study of Eu-doped Ga2O3 and GaN nanowires and nanoparticles produced by hydrothermal growth


Pag. 185-189

Rusu Emil1, Ursachi Veaceslav1, Culeac Ion2, Raevsky Simion3, Vlazan Paulina4
 
1 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,
2 Institute of Applied Physics, Academy of Sciences of Moldova,
3 Moldova State University,
4 National Institute for Research and Development in Electrochemistry and Condensed Matter, Timisoara
 
 
Disponibil în IBN: 21 mai 2018


Rezumat

We present results on preparation of Eu doped GaN nanoparticles and nanowires on the basis of Ga2O3 nanomaterial produced by hydrothermal growth. The monoclinic Ga2O3 nanoparticles and nanowires have been prepared with gallium nitrate and sodium hydroxide as precursors. The geometrical form on the nanomaterial is determined by the duration of the hydrothermal process. The Ga2O3 nanomaterial is transformed unto GaN nanoparticles and nanowires by nitridation in a flow of NH3 and H2. The photoluminescence properties Eu doped Ga2O3 and GaN nanomaterial are investigated under pulsed and continuum wave excitation. The produced material is also investigated by means of XRD analysis, Raman scattering and Fourier transform infrared (FTIR) spectroscopy.

Cuvinte-cheie
nanoparticles, nanowires, Luminescence,

Hydrothermal growth, nitridation