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 SM ISO690:2012URSACHI, Veaceslav, TIGINYANU, Ion, ZALAMAI, Victor, HUBBARD, Seth M., PAVLIDIS, Dimitris. Optical characterization of AlN/GaN heterostructures. In: Journal of Applied Physics, 2003, vol. 94, pp. 4813-4818. ISSN 0021-8979. DOI: https://doi.org/10.1063/1.1609048 |
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  Journal of Applied Physics |
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| Volumul 94 / 2003 / ISSN 0021-8979 /ISSNe 1089-7550 | ||||||
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| DOI:https://doi.org/10.1063/1.1609048 | ||||||
| Pag. 4813-4818 | ||||||
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The AlN/GaN/sapphire heterostructures with AlN gate film thickness of 3-35 nm were characterized by using photoreflectivity (PR) and photoluminescence (PL) spectroscopy. A model of electronic transitions responsible for the emission band involved is also proposed. It was found that the increase of the AlN gate film thickness beyond a critical value lead to a sharp decrease in exciton resonance in PR and PL spectra. |
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| Cuvinte-cheie Aluminum nitride, Electron gas, Gallium nitride, Hall effect, photoluminescence |
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