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 SM ISO690:2012SYRBU, Nicolae, TIGINYANU, Ion, URSACHI, Veaceslav, ZALAMAI, Victor, POPA, Veaceslav, HUBBARD, Seth M., PAVLIDIS, Dimitris. Free excitons in strained MOCVD-grown GaN layers. In: MRS Internet Journal of Nitride Semiconductor Research, 2003, vol. 8, p. 0. ISSN 1092-5783. DOI: https://doi.org/10.1557/s1092578300000442 |
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 MRS Internet Journal of Nitride Semiconductor Research |
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| Volumul 8 / 2003 / ISSN 1092-5783 | ||||||
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| DOI:https://doi.org/10.1557/s1092578300000442 | ||||||
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GaN layers grown on sapphire substrates were characterized using high resolution optical reflectivity and absorption spectroscopy in the region of ground and excited exciton states. The main exciton parameters are deduced from calculations of reflectivity contours for A and B exciton S-states. The parameters of the Γ 5 state of the A-exciton as well as those of the Γ 5 and Γ 1 states of the B-exciton are determined from a comparative analysis of reflectivity and absorption spectra in thin layers. The influence of strains inherent to MOCVD-grown GaN layers on the exciton parameters including effective masses and longitudinal-transverse splitting is discussed. Electron transitions from the three (Γ 9, Γ 7, Γ 7) upper valence bands to the second E c2 conduction band of Γ 3 symmetry were evidenced. |
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| Cuvinte-cheie Crystal field, Exciton parameters, N layers, Ga, Valence bands |
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