Photoluminescence and resonant Raman scattering in highly conductive ZnO layers
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ZALAMAI, Victor; URSAKI, Veacheslav; RUSU, Emil; ARABADJI, P; TIGINYANU, Ion; SIRBU, Lilian. Photoluminescence and resonant Raman scattering in highly conductive ZnO layers. In: Applied Physics Letters. 2004, nr. 25(84), pp. 5168-5170. ISSN 0003-6951.
10.1063/1.1763980
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Applied Physics Letters
Numărul 25(84) / 2004 / ISSN 0003-6951

Photoluminescence and resonant Raman scattering in highly conductive ZnO layers


DOI: 10.1063/1.1763980
Pag. 5168-5170

Zalamai Victor1, Ursaki Veacheslav1, Rusu Emil1, Arabadji P1, Tiginyanu Ion2, Sirbu Lilian2
 
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 Technical University of Moldova
 
Disponibil în IBN: 14 aprilie 2018


Rezumat

The energy band structure in highly conductive ZnO layers was investigated using photoluminescence (PL) and resonant Raman scattering (RRS). The ZnO layers were deposited on porous InP substrates by thermal decomposition of Zn(C 5H7O2)2 metalorganic compound. Due to the merging of conduction and donor bands, a band gap narrowing was observed in highly conductive n-ZnO films. It was observed that the emission spectra of the ZnO layers consisted of the multiphoton RRS lines, which were superimposed on a broad asymmeteric PL band with the maximum at 3.36 eV.

Cuvinte-cheie
Band structure, Carrier concentration, Electron transitions, Organometallics, oxidation, photoluminescence, Raman scattering, scanning electron microscopy, Thermal expansion,

Chemisorption, desorption, Fermi level, Lattice constants, pyrolysis, Semiconducting indium phosphide