Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
761 0 |
SM ISO690:2012 COJOCARI, Oleg, POPA, Veaceslav, URSAKI, Veacheslav, TIGINYANU, Ion, HARTNAGEL, Hans Ludwig. GaN Schottky multiplier diodes prepared by electroplating: A study of passivation technology. In: Semiconductor Science and Technology, 2004, vol. 19, pp. 1273-1279. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/19/11/011 |
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Semiconductor Science and Technology | |||||
Volumul 19 / 2004 / ISSN 0268-1242 | |||||
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DOI: https://doi.org/10.1088/0268-1242/19/11/011 | |||||
Pag. 1273-1279 | |||||
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Rezumat | |||||
This paper presents the results of a Pt/n-GaN Schottky contact technology development based on electrochemical metal deposition. Three different technological approaches are used to fabricate GaN varactor diodes. The effects of SiNx-surface passivation and reactive ion etching (RIE) as required to define the micrometre-size Schottky contacts are investigated using photoluminescence (PL) spectroscopy and electrical characterization of the fabricated Schottky diodes. The perspective of Pt/n-GaN Schottky varactor diodes for high-frequency multipliers is estimated on the basis of dc parameters measured for a structure with a 5 μm electrode diameter. |
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Cuvinte-cheie Electric conductivity, electrochemistry, electroplating, photoluminescence, Semiconducting gallium compounds, Ultraviolet radiation, Light emission, Passivation |
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