GaN Schottky multiplier diodes prepared by electroplating: A study of passivation technology
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COJOCARI, Oleg, POPA, Veaceslav, URSAKI, Veacheslav, TIGINYANU, Ion, HARTNAGEL, Hans Ludwig. GaN Schottky multiplier diodes prepared by electroplating: A study of passivation technology. In: Semiconductor Science and Technology, 2004, vol. 19, pp. 1273-1279. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/19/11/011
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Semiconductor Science and Technology
Volumul 19 / 2004 / ISSN 0268-1242

GaN Schottky multiplier diodes prepared by electroplating: A study of passivation technology

DOI: https://doi.org/10.1088/0268-1242/19/11/011

Pag. 1273-1279

Cojocari Oleg123, Popa Veaceslav31, Ursaki Veacheslav31, Tiginyanu Ion31, Hartnagel Hans Ludwig2
 
1 Technical University of Moldova,
2 Technical University Darmstadt,
3 Institute of Applied Physics, Academy of Sciences of Moldova
 
Disponibil în IBN: 13 aprilie 2018


Rezumat

This paper presents the results of a Pt/n-GaN Schottky contact technology development based on electrochemical metal deposition. Three different technological approaches are used to fabricate GaN varactor diodes. The effects of SiNx-surface passivation and reactive ion etching (RIE) as required to define the micrometre-size Schottky contacts are investigated using photoluminescence (PL) spectroscopy and electrical characterization of the fabricated Schottky diodes. The perspective of Pt/n-GaN Schottky varactor diodes for high-frequency multipliers is estimated on the basis of dc parameters measured for a structure with a 5 μm electrode diameter.

Cuvinte-cheie
Electric conductivity, electrochemistry, electroplating, photoluminescence, Semiconducting gallium compounds, Ultraviolet radiation, Light emission, Passivation