Porosity-induced gain of luminescence in CdSe
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MONAICO, Eduard, URSAKI, Veacheslav, URBIETA, Ana, FERNANDEZ, P, PIQUERAS, Javier, BOYD, Robert W., TIGINYANU, Ion. Porosity-induced gain of luminescence in CdSe. In: Semiconductor Science and Technology, 2004, vol. 19, pp. 121-123. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/19/12/L04
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Semiconductor Science and Technology
Volumul 19 / 2004 / ISSN 0268-1242

Porosity-induced gain of luminescence in CdSe

DOI: https://doi.org/10.1088/0268-1242/19/12/L04

Pag. 121-123

Monaico Eduard1, Ursaki Veacheslav12, Urbieta Ana3, Fernandez P4, Piqueras Javier4, Boyd Robert W.4, Tiginyanu Ion12
 
1 Technical University of Moldova,
2 Institute of Applied Physics, Academy of Sciences of Moldova,
3 Universidad Complutense de Madrid,
4 University of Rochester
 
Disponibil în IBN: 13 aprilie 2018


Rezumat

Porous CdSe layers have been produced by anodic etching of crystalline substrates in a HCl solution. Anodization under in situ UV illumination resulted in the formation of uniformly distributed parallel pores with a diameter of 30 nm, stretching perpendicularly to the initial surface. At the same time, pronounced nonuniformities in the spatial distribution of pores were evidenced in samples subjected to anodic etching in the dark. Gain of luminescence was observed in some porous regions and attributed to the formation of ring microcavities for light in the porous network.

Cuvinte-cheie
Crystalline materials, Parallel processing systems, porous materials, etching, Luminescence, photoluminescence, scanning electron microscopy