Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
731 0 |
SM ISO690:2012 MONAICO, Eduard, URSAKI, Veacheslav, URBIETA, Ana, FERNANDEZ, P, PIQUERAS, Javier, BOYD, Robert W., TIGINYANU, Ion. Porosity-induced gain of luminescence in CdSe. In: Semiconductor Science and Technology, 2004, vol. 19, pp. 121-123. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/19/12/L04 |
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Semiconductor Science and Technology | |||||
Volumul 19 / 2004 / ISSN 0268-1242 | |||||
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DOI: https://doi.org/10.1088/0268-1242/19/12/L04 | |||||
Pag. 121-123 | |||||
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Rezumat | |||||
Porous CdSe layers have been produced by anodic etching of crystalline substrates in a HCl solution. Anodization under in situ UV illumination resulted in the formation of uniformly distributed parallel pores with a diameter of 30 nm, stretching perpendicularly to the initial surface. At the same time, pronounced nonuniformities in the spatial distribution of pores were evidenced in samples subjected to anodic etching in the dark. Gain of luminescence was observed in some porous regions and attributed to the formation of ring microcavities for light in the porous network. |
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Cuvinte-cheie Crystalline materials, Parallel processing systems, porous materials, etching, Luminescence, photoluminescence, scanning electron microscopy |
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