Fabrication and photoluminescence properties of porous CdSe
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TIGINYANU, Ion, MONAICO, Eduard, URSACHI, Veaceslav, TEZLEVAN, Victor, BOYD, Robert W.. Fabrication and photoluminescence properties of porous CdSe. In: Applied Physics Letters, 2005, vol. 86, pp. 1-3. ISSN 0003-6951. DOI: https://doi.org/10.1063/1.1864240
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Applied Physics Letters
Volumul 86 / 2005 / ISSN 0003-6951

Fabrication and photoluminescence properties of porous CdSe

DOI:https://doi.org/10.1063/1.1864240

Pag. 1-3

Tiginyanu Ion123, Monaico Eduard123, Ursachi Veaceslav23, Tezlevan Victor23, Boyd Robert W.3
 
1 Technical University of Moldova,
2 Institute of Applied Physics, Academy of Sciences of Moldova,
3 University of Rochester
 
 
Disponibil în IBN: 13 aprilie 2018


Rezumat

We report the results of a study of the growth of pores in n-CdSe single crystals using anodic etching techniques. Upon anodization in dark, a nonuniform distribution of pores was produced. However, anodic dissolution of the material under in situ UV illumination proves to result in uniform distribution of pores stretching perpendicularly to the initial surface of the specimen. The porous structures exhibit less luminescence than the bulk samples. These results pave the way for cost-effective manufacturing of CdSe-based semiconductor nanotemplates for nanofabrication.

Cuvinte-cheie
Anodes, Crystal growth, etching, Fabrication, nanotechnology, photoluminescence, porous materials, Semiconductor materials, single crystals, Ultraviolet radiation