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 SM ISO690:2012IVANOVA, Galina, NEDEOGLO, Dumitru, NEGEOGLO, N., SIRKELI, Vadim, TIGINYANU, Ion, URSACHI, Veaceslav. Interaction of intrinsic defects with impurities in AI doped ZnSe single crystals. In: Journal of Applied Physics, 2007, vol. 101, p. 0. ISSN 0021-8979. DOI: https://doi.org/10.1063/1.2712147 |
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  Journal of Applied Physics |
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| Volumul 101 / 2007 / ISSN 0021-8979 /ISSNe 1089-7550 | ||||||
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| DOI:https://doi.org/10.1063/1.2712147 | ||||||
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We report on the results of a complex study of electrical (77-300 K) and luminescence (10-300 K) properties of n-ZnSe single crystals annealed in a Zn melt containing Al impurity at concentrations ranging from 0.1 to 80 at. %. It was established that Al atoms form donor centers only at a low impurity concentration (≤0.5 at. %). The increase of the amount of Al atoms in the crystal results in the formation of (VZnAlZn) associative acceptor centers leading to the self-compensation of the shallow Al donor impurity. This process is accompanied by the emergence and development of a self-activated luminescence band associated with the (VZnAl Zn) acceptor centers. We show that further increase of the Al content in the melt (≥ 10 at. %) leads to the dissociation of the acceptor complexes and to a recurrent donor doping effect. The photoluminescence spectra of such crystals are dominated by activated luminescence via the (CuznV seCui) and (CuZnAlZn) associative centers. |
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| Cuvinte-cheie aluminum, Crystal impurities, Doping (additives), Luminescence, Photoluminescence spectroscopy, Zinc compounds |
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<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Ivanova, G.N.</dc:creator> <dc:creator>Nedeoglo, D.D.</dc:creator> <dc:creator>Negeoglo, N.</dc:creator> <dc:creator>Sirkeli, V.P.</dc:creator> <dc:creator>Tighineanu, I.M.</dc:creator> <dc:creator>Ursachi, V.V.</dc:creator> <dc:date>2007-12-01</dc:date> <dc:description xml:lang='en'><p>We report on the results of a complex study of electrical (77-300 K) and luminescence (10-300 K) properties of n-ZnSe single crystals annealed in a Zn melt containing Al impurity at concentrations ranging from 0.1 to 80 at. %. It was established that Al atoms form donor centers only at a low impurity concentration (≤0.5 at. %). The increase of the amount of Al atoms in the crystal results in the formation of (V<sub>Zn</sub>Al<sub>Zn</sub>) associative acceptor centers leading to the self-compensation of the shallow Al donor impurity. This process is accompanied by the emergence and development of a self-activated luminescence band associated with the (V<sub>Zn</sub>Al <sub>Zn</sub>) acceptor centers. We show that further increase of the Al content in the melt (≥ 10 at. %) leads to the dissociation of the acceptor complexes and to a recurrent donor doping effect. The photoluminescence spectra of such crystals are dominated by activated luminescence via the (Cu<sub>zn</sub>V <sub>se</sub>Cu<sub>i</sub>) and (Cu<sub>Zn</sub>Al<sub>Zn</sub>) associative centers.</p></dc:description> <dc:identifier>10.1063/1.2712147</dc:identifier> <dc:source>Journal of Applied Physics () 0-0</dc:source> <dc:subject>aluminum</dc:subject> <dc:subject>Crystal impurities</dc:subject> <dc:subject>Doping (additives)</dc:subject> <dc:subject>Luminescence</dc:subject> <dc:subject>Photoluminescence spectroscopy</dc:subject> <dc:subject>Zinc compounds</dc:subject> <dc:title>Interaction of intrinsic defects with impurities in AI doped ZnSe single crystals</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>
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