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 SM ISO690:2012IVANOVA, Galina, NEDEOGLO, Dumitru, NEGEOGLO, N., SIRKELI, Vadim, TIGINYANU, Ion, URSACHI, Veaceslav. Interaction of intrinsic defects with impurities in AI doped ZnSe single crystals. In: Journal of Applied Physics, 2007, vol. 101, p. 0. ISSN 0021-8979. DOI: https://doi.org/10.1063/1.2712147 |
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  Journal of Applied Physics |
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| Volumul 101 / 2007 / ISSN 0021-8979 /ISSNe 1089-7550 | ||||||
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| DOI:https://doi.org/10.1063/1.2712147 | ||||||
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We report on the results of a complex study of electrical (77-300 K) and luminescence (10-300 K) properties of n-ZnSe single crystals annealed in a Zn melt containing Al impurity at concentrations ranging from 0.1 to 80 at. %. It was established that Al atoms form donor centers only at a low impurity concentration (≤0.5 at. %). The increase of the amount of Al atoms in the crystal results in the formation of (VZnAlZn) associative acceptor centers leading to the self-compensation of the shallow Al donor impurity. This process is accompanied by the emergence and development of a self-activated luminescence band associated with the (VZnAl Zn) acceptor centers. We show that further increase of the Al content in the melt (≥ 10 at. %) leads to the dissociation of the acceptor complexes and to a recurrent donor doping effect. The photoluminescence spectra of such crystals are dominated by activated luminescence via the (CuznV seCui) and (CuZnAlZn) associative centers. |
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| Cuvinte-cheie aluminum, Crystal impurities, Doping (additives), Luminescence, Photoluminescence spectroscopy, Zinc compounds |
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