| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 627 0 |
 SM ISO690:2012URSACHI, Veaceslav, TIGINYANU, Ion, VOLCIUC, Olesea, POPA, Veaceslav, SKURATOV, Vladimir, MORCOC, Hadis. Nanostructuring induced enhancement of radiation hardness in GaN epjlayers. In: Applied Physics Letters, 2007, vol. 90, p. 0. ISSN 0003-6951. DOI: https://doi.org/10.1063/1.2723076 |
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  Applied Physics Letters |
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| Volumul 90 / 2007 / ISSN 0003-6951 | ||||||
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| DOI:https://doi.org/10.1063/1.2723076 | ||||||
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The radiation hardness of as-grown and electrochemically nanostructured GaN epilayers against heavy ion irradiation was studied by means of photoluminescence (PL) and resonant Raman scattering (RRS) spectroscopy. A nanostructuring induced enhancement of the GaN radiation hardness by more than one order of magnitude was derived from the PL and RRS analyses. These findings show that electrochemical nanostructuring of GaN layers is a potentially attractive technology for the development of radiation hard devices. |
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| Cuvinte-cheie Electrochemical nanostructuring, Radiation hard devices |
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